FZ1800R12KF4 Infineon Technologies, FZ1800R12KF4 Datasheet - Page 2

• Manufacturer Part Number: FZ1800R12KF4
• Description: IGBT Modules N-CH 1.2KV 1.8KA
• Manufacturer: Infineon Technologies

Specifications of FZ1800R12KF4

• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Triple Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.7 V
• Continuous Collector Current At 25 C: 1800 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 5 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM190
• Ic (max): 1,800.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Standard
• Housing: IHM 190 mm
• Lead Free Status / RoHS Status: Compliant

Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
Kollektor-Dauergleichstrom
Period. Kollektor Spitzenstrom
Gesamt-Verlustleistung
Gate-Emitter-Spitzenspannung
Dauergleichstrom
Periodischer Spitzenstrom
Isolations-Prüfspannung
Koll.-Emitter Sättigungsspannung
Gate-Schwellspannung
Eingangskapazität
Kollektor-Emitter Reststrom
Gate-Emitter Reststrom
Emitter-Gate Reststrom
Einschaltzeit (ohmsche Last)
Speicherzeit (induktive Last)
Fallzeit (induktive Last)
t
v
R
t
Unabhängig davon dilt bei abweichenden Bedingungen / with regard to other conditions
Durchlaßspannung
Rückstromspitze
Sperrverzögerungsladung
Innerer Wärmewiderstand
Übergangs-Wärmewiderstand
Höchstzul. Sperrschichttemp.
Betriebstemperatur
Lagertemperatur
Gehäuse, siehe Anlage
Innere Isolation
Anzugsdrehm. f. mech. Befest.
Anzugsdrehm. f. elektr. Anschl.
Gewicht
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
256
FZ 1800 R 12 KF4
Höchstzulässige Werte / Maximum rated values
Charakteristische Werte / Characteristic values: Transistor
Bedingungen für den Kurzschlußschutz / Conditions for short-circuit protection
Charakteristische Werte / Characteristic values: Invers-Diode
Thermische Eigenschaften / Thermal properties
Mechanische Eigenschaften / Mechanical properties
fg
vj
L
GF
= 125°C
= 10µs
= ± 15V
= R
GR
=0,43
eupec GmbH + Co KG, Max-Plank-Str. 5, D59581 Warstein, Telefon [phone], Telefax /764-
collector-emitter voltage
DC-collector current
repetitive peak collector current
total power dissipation
gate-emitter peak voltage
DC forward current
repetitive peak forw. current
insulating test voltage
coll.-emitter saturation voltage
gate threshold voltage
input capacity
collector-emitter cut-off current
gate leakage current
gate leakage current
turn-on time (resistive load)
storage time
fall time (inductive load)
V
v
i
i
forward voltage
peak reverse recovery current
recovered charge
thermal resist., junction to case
thermal resist., case to heatsink
max. junction temperature
operating temperature
storage temperature
case, see appendix
internal insulation
mounting torque
terminal connection torque
weight
CMK1
CMK2
CEM
CC
=
=
= 18000V
= 13500V
900V
750V
t
t
t
RMS, f=50 Hz, t= 1 min.
i
i
i
f
v
v
v
v
v
i
v
t
i
v
t
i
v
t
i
i
i
v
v
i
v
v
Transistor / transistor, DC
Diode, DC
pro Module / per Module
Transistor
Transistor / transistor
Seite / page
terminals M4
terminals M8
C
C
C
C
C
C
F
F
F
F
p
C
p
O
vj
vj
vj
GE
CE
CE
CE
CE
L
L
L
RM
RM
RM
RM
=1,8kA, v
=1,8kA, v
=1,8kA, -di
=1,8kA, -di
=1 ms
=1ms
=25°C, Transistor
=1,8kA, v
=1,8kA,v
=72mA,v
=1,8kA,v
=125°C
=1,8kA,v
=125°C
=1,8kA,v
=125°C
=1MHz,t
=15V,R
=15V,R
=15V,R
=0
=1200V,v
=1200V,v
=0V, v
=0V, v
=6
=6
=6
=6
00
00
00
00
V,v
V,v
V,v
V,v
GE
EG
G
G
G
GE
vj
CE
CE
CE
CE
=0,43 ,t
=0,43 ,t
=0,43 ,t
GE
GE
GE
=25°C,v
EG
EG
EG
EG
=20V, t
=20V, t
F
F
=15V,t
=6
=6
=6
=v
GE
GE
=0V, t
=0V, t
=15V, t
/dt=1,8kA/µs
/dt=1,8kA/µs
=10V,t
=10V,t
=10V,t
=10V,t
=0V,t
=0V,t
GE
00
00
00
,t
V,v
V,v
V,v
vj
vj
vj
vj
vj
vj
CE
vj
vj
vj
=25°C
=25°C
=25°C
=25°C
=125°C
=125°C
vj
vj
vj
vj
vj
vj
vj
L
=25°C
L
=25°C
L
=25°C
=25°C
=125°C
=15V
=15V
=15V
=25°C
=125°C
=25°C
=125°C
=25°C
=25V,
v
CEM
V
I
I
P
V
I
I
V
v
v
C
i
i
i
t
t
t
V
I
Q
R
R
t
t
t
M1
M2
G
CES
GES
EGS
C
CRM
F
FRM
on
s
f
RM
vj max
c op
stg
CE sat
GE(th)
CES
tot
GE
ISOL
ies
F
thJC
thCK
r
= V
CES
- 12nH . |di
min.
4,5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
C
typ.
135
/dt|
2,7
3,3
5,5
2,2
-40...+125 °C
-40...+125 °C
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ca.2300 g
+/- 20 V
0,011 °C/W
0,024 °C/W
0,006 °C/W
8...10 Nm
Al
1200 V
1800 A
3600 A
1800 A
3600 A
max
300 mA
400 nA
400 nA
150 °C
2
2,5 kV
3,2 V
3,9 V
6,5 V
2,7 V
2,5 V
O
11 kW
30 mA
1
3 Nm
2 Nm
- nF
- µs
- µs
- µs
- µs
- µs
- µs
- A
- A
- µAs
- µAs
3