STH180N10F3-2 STMicroelectronics, STH180N10F3-2 Datasheet - Page 14

• Manufacturer Part Number: STH180N10F3-2
• Description: MOSFET N-CH 100V 180A H2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STH180N10F3-2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 114.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 6665pF @ 25V
• Power - Max: 315W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11216-2

Package mechanical data
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Figure 23. H²PAK 2 leads drawing
Figure 24. H²PAK 2 recommended footprint
Doc ID 14933 Rev 3
STH180N10F3-2, STP180N10F3
8159712_B
8159712_B