IXFT60N50P3 IXYS, IXFT60N50P3 Datasheet - Page 4

• Manufacturer Part Number: IXFT60N50P3
• Description: MOSFET N-CH 500V 60A TO268
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFT60N50P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 96nC @ 10V
• Input Capacitance (ciss) @ Vds: 6250pF @ 25V
• Power - Max: 1040W
• Mounting Type: *
• Package / Case: *
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.1
• Ciss, Typ, (pf): 6250
• Qg, Typ, (nc): 96
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 1040
• Rthjc, Max, (ºc/w): 0.12
• Package Style: TO-268
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
180
160
140
120
100
100
10
80
60
40
20
90
80
70
60
50
40
30
20
10
1
0
0
0.3
3.5
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.4
5
4.0
0.5
10
4.5
Fig. 7. Input Admittance
0.6
Fig. 11. Capacitance
T
J
15
= 125ºC
5.0
V
0.7
V
V
DS
SD
GS
20
- Volts
- Volts
- Volts
0.8
5.5
T
J
= 125ºC
25
- 40ºC
T
J
25ºC
0.9
= 25ºC
C oss
C rss
C iss
6.0
30
1.0
6.5
35
1.1
7.0
1.2
40
1000
100
120
100
0.1
80
60
40
20
10
10
9
8
7
6
5
4
3
2
1
0
0
1
10
0
0
R
V
I
I
10
T
T
Single Pulse
D
G
10
DS
DS(on)
J
C
= 30A
= 10mA
= 150ºC
= 25ºC
IXFT60N50P3 IXFQ60N50P3
= 250V
Fig. 12. Forward-Bias Safe Operating Area
Limit
20
20
30
Fig. 8. Transconductance
30
Fig. 10. Gate Charge
40
Q
40
G
I
- NanoCoulombs
D
V
50
- Amperes
DS
50
100
- Volts
60
60
IXFH60N50P3
70
T
J
70
= - 40ºC
80
125ºC
25ºC
80
90
100µs
1ms
100
90
110
1,000
100