IXFK64N60P3 IXYS, IXFK64N60P3 Datasheet - Page 4

• Manufacturer Part Number: IXFK64N60P3
• Description: MOSFET N-CH 600V 64A TO264
• Manufacturer: IXYS
• Series: Polar3™ HiPerFET™r

Specifications of IXFK64N60P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 95 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 145nC @ 10V
• Input Capacitance (ciss) @ Vds: 9900pF @ 25V
• Power - Max: 1130W
• Mounting Type: *
• Package / Case: *
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 64
• Rds(on), Max, Tj=25°c, (?): 0.095
• Ciss, Typ, (pf): 9900
• Qg, Typ, (nc): 145
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 1130
• Rthjc, Max, (ºc/w): 0.11
• Package Style: TO-264
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
140
120
100
100
90
80
70
60
50
40
30
20
10
80
60
40
20
10
0
0
1
3.5
0.3
0
f
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.4
= 1 MHz
5
4.0
0.5
10
Fig. 7. Input Admittance
4.5
0.6
Fig. 11. Capacitance
T
J
15
= 125ºC
V
V
0.7
V
DS
SD
GS
5.0
20
- Volts
- Volts
- Volts
T
J
= 125ºC
0.8
- 40ºC
25ºC
25
T
5.5
0.9
J
C oss
C iss
C rss
= 25ºC
30
1.0
6.0
35
1.1
6.5
1.2
40
1000
100
120
100
0.1
10
10
80
60
40
20
9
8
7
6
5
4
3
2
1
0
1
0
10
0
0
V
I
I
T
T
Single Pulse
R
D
G
DS
J
C
10
DS(on)
= 32A
= 10mA
20
= 150ºC
= 25ºC
= 300V
Fig. 12. Forward-Bias Safe Operating Area
Limit
20
40
Fig. 8. Transconductance
30
Fig. 10. Gate Charge
60
Q
G
- NanoCoulombs
I
D
40
V
- Amperes
DS
100
80
- Volts
50
100
IXFK64N60P3
IXFX64N60P3
60
120
T
J
70
= - 40ºC
125ºC
25ºC
140
80
100µs
1ms
1,000
160
90