NB6L16DTG ON Semiconductor, NB6L16DTG Datasheet - Page 3

IC RCVR DRVR XLATOR BUFF 8-TSSOP

NB6L16DTG

Manufacturer Part Number
NB6L16DTG
Description
IC RCVR DRVR XLATOR BUFF 8-TSSOP
Manufacturer
ON Semiconductor
Type
Buffer/Driver, Translatorr
Datasheet

Specifications of NB6L16DTG

Number Of Circuits
1
Ratio - Input:output
1:1
Differential - Input:output
Yes/Yes
Input
CML, LVCMOS, LVDS, LVNECL, LVPECL, LVTTL
Output
ECL
Frequency - Max
6GHz
Voltage - Supply
2.375 V ~ 3.465 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Frequency-max
6GHz
Supply Voltage (max)
3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Supply Current
12 mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NB6L16DTG
NB6L16DTGOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NB6L16DTG
Manufacturer:
ON Semiconductor
Quantity:
2
Part Number:
NB6L16DTG
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
NB6L16DTG
Quantity:
191
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. MAXIMUM RATINGS
V
V
V
I
V
I
T
T
q
q
q
q
T
Symbol
out
BB
A
stg
JA
JC
JA
JC
sol
CC
EE
I
INPP
PECL Mode Power Supply
NECL Mode Power Supply
PECL Mode Input Voltage
NECL Mode Input Voltage
Output Current
Differential Input Voltage
V
Operating Temperature Range
Storage Temperature Range
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Thermal Resistance (Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Wave Solder
BB
Sink/Source
Parameter
Standard
Pb−Free
|D − D|
http://onsemi.com
V
V
V
V
Continuous
Surge
V
V
0 lfpm
500 lfpm
Standard Board
0 lfpm
500 lfpm
Standard Board
v 3 sec @ 248°C
v 3 sec @ 260°C
EE
CC
EE
CC
CC
CC
Condition 1
= 0 V
= 0 V
= 0 V
= 0 V
− V
− V
3
EE
EE
w 2.8 V
t 2.8 V
V
V
SOIC−8
SOIC−8
SOIC−8
TSSOP−8
TSSOP−8
TSSOP−8
I
I
v V
w V
Condition 2
CC
EE
|V
−65 to +150
−40 to +85
41 to 44
41 to 44
CC
Rating
± 0.5
−3.6
−3.6
190
130
185
140
265
265
3.6
3.6
2.8
25
50
− V
EE
|
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Un-
mA
mA
mA
its
°C
°C
°C
V
V
V
V
V

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