NB3N508SDTR2G ON Semiconductor, NB3N508SDTR2G Datasheet - Page 4

• Manufacturer Part Number: NB3N508SDTR2G
• Description: IC CLK GEN VCXO M-LVDS 16-TSSOP
• Manufacturer: ON Semiconductor
• Series: PureEdge™r
• Type: Clock Generatorr

Specifications of NB3N508SDTR2G

• Pll: Yes
• Input: Crystal
• Output: M-LVDS
• Number Of Circuits: 1
• Ratio - Input:output: 1:1
• Differential - Input:output: No/Yes
• Frequency - Max: 216MHz
• Divider/multiplier: Yes/No
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP
• Frequency-max: 216MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NB3N508SDTR2G; NB3N508SDTR2GOSTR

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. JEDEC standard multilayer board − 2S2P (2 Signal, 2 Power).
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
3. M−LVDS outputs require 50 W receiver termination resistor between differential. pair. See Figure 3
4. V
5. V
6. Parameters guaranteed by design but not tested in production.
Table 3. MAXIMUM RATINGS
Table 4. DC CHARACTERISTICS
Symbol
Symbol
V
V
I
T
T
q
q
T
I
V
V
DV
V
DV
V
V
I
OUT
DD
SC
JA
JA
A
STG
SOL
DD
I
IA
OD
OS
OH
OL
OHmax
OLmax
OD
OS
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
= V
= V
Positive Power Supply
Input Voltage (V
M−LVDS Output Current
Operating Temperature Range
Storage Temperature Range
Thermal Resistance
(Junction−to−Ambient)
Thermal Resistance (Junction−to−Case)
Wave Solder
Power Supply Current (outputs loaded with R
VCXO Control Voltage, V
Differential Output Voltage (Note 3)
Change in Magnitude of V
(Notes 3, 6)
Offset Voltage (See Figure 4)
Change in Magnitude of V
(Note 6)
Output HIGH Voltage (Note 4)
Output LOW Voltage (Note 5)
Output Short Circuit Current
OSmin
OSmax
− ½ V
Table 2. ATTRIBUTES
1. For additional information, see Application Note AND8003/D.
ESD Protection
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1)
Flammability Rating
Transistor Count
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
+ ½ V
ODmax
ODmax
Parameter
IN
)
.
.
IN
OD
OS
(V
Characteristic
DD
for Complementary Output States
for Complementary Output States
Characteristics
= 3.135 V to 3.465 V, GND = 0 V, T
Pb−Free
http://onsemi.com
L
GND = 0 V
GND = 0 V
Continuous
Surge
0 lfpm
500 lfpm
(Note 2)
= 50 W)
Condition 1
Oxygen Index: 28 to 34
CLK or CLK to GND
Human Body Model
4
Machine Model
TSSOP−16
A
= 0°C to +70°C)
GND v V
Condition 2
TSSOP–16
TSSOP–16
TSSOP−16
UL 94 V−0 @ 0.125 in
Min
480
−50
300
−50
−25
42
I
0
v V
6000 Devices
> 400 V
Level 3
DD
> 4 kV
Value
1300
Typ
565
700
52
−65 to +150
0 to +70
33 to 36
Rating
V
138
108
265
4.6
25
50
DD
2100
2425
Max
650
3.3
62
50
50
43
°C/W
°C/W
°C/W
Unit
Unit
mA
mA
mA
mV
mV
mV
mV
mV
mV
mA
°C
°C
°C
V
V
V