ITS4141DXT Infineon Technologies, ITS4141DXT Datasheet

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ITS4141DXT

Manufacturer Part Number
ITS4141DXT
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of ITS4141DXT

Switch Type
High Side
Power Switch Family
ITS4141D
Input Voltage
-10 to 48V
Power Switch On Resistance
150mOhm
Output Current
1.4A
Number Of Outputs
Single
Mounting
Surface Mount
Supply Current
1mA
Package Type
TO-252
Operating Temperature (min)
-30C
Operating Temperature (max)
85C
Operating Temperature Classification
Commercial
Pin Count
4 +Tab
Power Dissipation
1.4W
Lead Free Status / Rohs Status
Compliant
Features
Smart High-Side Power Switch
for Industrial Applications
1 Channel: 1 x 200m
Application
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS
Providing embedded protective functions.
Short circuit protection
Current limitation
Overload protection
Overvoltage protection
Undervoltage shutdown with auto-
Switching inductive loads
Clamp of negative voltage at output
CMOS compatible input
Thermal shutdown with restart
ESD - Protection
Loss of GND and loss of V
Very low standby current
Reverse battery protection with external resistor
Improved electromagnetic compatibility (EMC)
(including load dump)
restart and hysteresis
with inductive loads
All types of resistive, inductive and capacitive loads
µC compatible power switch for 12 V and 24 V DC industrial applications
Replaces electromechanical relays and discrete circuits
bb
protection
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Operating temperature
Page 1
technology.
V
V
R
T
bb(AZ)
bb(on)
a
ON
PG-TO252-5-1
-30...+85 °C
12...45
2006-03-22
ITS 4141D
200
47
V
V
m

Related parts for ITS4141DXT

ITS4141DXT Summary of contents

Page 1

... Improved electromagnetic compatibility (EMC) Application All types of resistive, inductive and capacitive loads µC compatible power switch for 12 V and industrial applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS Providing embedded protective functions ...

Page 2

... Level shifter ind. loads Rectifier Logic GND 4 Signal GND Output to the load not connected connected with TAB Logic ground Input, activates the power switch in case of logic high signal Positive power supply voltage Page TAB/3 Gate protection OUT 1 Temperature sensor ® ...

Page 3

... Supply voltage 2) Continuous input voltage Load current (Short - circuit current, see page 5) Current through input pin (DC) Reverse current through GND-pin Junction temperature Operating temperature Storage temperature 4) Power dissipation Inductive load switch-off energy dissipation single pulse = 125 ° 0 Load dump protection V LoadDump ...

Page 4

... Electrical Characteristics Parameter -40...125 ° 15...30 V unless otherwise specified j bb Thermal Characteristics Thermal resistance @ 6 cm Thermal resistance, junction - case Load Switching Capabilities and Characteristics On-state resistance = 25 ° 0 125 ° Nominal load current 1) Device on PCB Turn-on time to 90 Turn-off time to 10 Slew rate on ...

Page 5

... ° 125 ° Repetitive short circuit current limit (see timing diagrams Output clamp (inductive load switch off OUT bb ON(CL Overvoltage protection Thermal overload trip temperature Thermal hysteresis 1 higher current due temperature sensor 2 Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as " ...

Page 6

... Input 1) Continuous input voltage Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current V 1 state input current Input delay time at switch on V Input resistance (see page 8) Reverse Battery 3)2) Reverse battery voltage GND R = 150 GND Continuous reverse drain current = 25 ° ...

Page 7

EMC-Characteristics All EMC-Characteristics are based on limited number of sampels and no part of production test. Test Conditions: If not other specified the test circuitry is the minimal functional configuration without any external components for protection or filtering. Supply voltage: ...

Page 8

Conducted Emission Acc. IEC 61967 150 Typ. V -Pin Emission at DC-On with 150 -matching network ...

Page 9

Conducted Susceptibility Acc. 47A/658/CD IEC 62132-4 (Direct Power Injection) Direct Power Injection: Failure criteria: Typ -Pin Susceptibility at DC-On/Off Typ. V ...

Page 10

Terms OUT PROFET V IN GND GND R GND Input circuit (ESD protection The use of ESD zener diodes ...

Page 11

... GND disconnect with GND pull OUT PROFET GND GND disconnect with charged inductive load V bb high IN PROFET GND V bb Inductive Load switch-off energy dissipation E bb OUT = Energy stored in load inductance: E While demagnetizing load inductance, the enérgy dissipated in PROFET with an approximate solution for OUT Page ...

Page 12

Typ. transient thermal impedance 6cm heatsink area thJA p Parameter: D K/W D=0.5 D=0 D=0.1 D=0.05 D=0. D=0. D ...

Page 13

Typ. turn on time 100 µ -40 - Typ. slew rate on dV/ ...

Page 14

Typ. initial peak short circuit current limit L(SCp 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -40 - Typ. initial peak ...

Page 15

Typ. input current µ 2.5 5 7.5 10 Typ. input threshold voltage 25°C IN(th ...

Page 16

... Maximum allowable inductive switch-off energy, single pulse 125° jstart 0.2 0.4 0.6 0.8 Typ. input delay time at switch f(V ) d(Vbbon) bb 400 µs 300 250 200 150 100 Typ. leakage current I L(off) µA 2.5 1 Page 32V ; V 1,2 V ...

Page 17

... Timing diagrams Figure 1a: Vbb turn on d(Vbbon) Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition IN V OUT 90 dV/dton 10 Figure 2b: Switching a lamp IN V OUT Figure 2c: Switching an inductive load IN V OUT dV/ dtoff t off Page 17 ITS 4141D t t 2006-03-22 ...

Page 18

Figure 3a: Turn on into short circuit, shut down by overtemperature, restart by cooling IN V OUT Output short to GND I I L(SCp L(SCr) Heating up of the chip may require several milliseconds, depending on external conditions. ...

Page 19

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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