CY8C5387AXI-108 Cypress Semiconductor Corp, CY8C5387AXI-108 Datasheet - Page 79

• Manufacturer Part Number: CY8C5387AXI-108
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY8C5387AXI-108

• Lead Free Status / Rohs Status: Compliant

11.7 Memory
Specifications are valid for -40°C ≤ T
where noted.
11.7.1 Flash
Table 11-54. Flash DC Specifications
Table 11-55. Flash AC Specifications
11.7.2 EEPROM
Table 11-56. EEPROM DC Specifications
Document Number: 001-55035 Rev. *F
Twrite
Terase
Tbulk
Parameter
Parameter
Parameter
Row write time (erase + program)
Row erase time
Row program time
Bulk erase time (256 KB)
Sector erase time (16 KB)
Total device program time
(including JTAG, etc.)
Flash endurance
Flash data retention time
Erase and program voltage
Erase and program voltage
Description
Description
Description
A
≤ 85°C and Tj ≤ 100°C, except where noted. Specifications are valid for 1.71 V to 5.5 V, except
Figure 11-1. Clock to Output Performance
PRELIMINARY
Vddd pin
Retention period measured from
last erase cycle
Conditions
Conditions
Conditions
PSoC
®
5: CY8C53 Family Data Sheet
1.71
100k
Min
1.71
Min
Min
20
-
-
-
-
-
-
Typ
Typ
Typ
-
-
-
-
-
-
-
-
-
-
Max
Max
Max
5.5
5.5
10
80
15
15
5
5
-
-
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program/
seconds
Units
cycles
Units
erase
years
Units
ms
ms
ms
ms
ms
V
V
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