BAR90098LRHE6327XT Infineon Technologies, BAR90098LRHE6327XT Datasheet

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Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz (typ. 0.19 pF) • Low forward resistance (typ. 1.3 Ω ...

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Thermal Resistance Parameter 1) Junction - soldering point BAR90-02LS all others Electrical Characteristics at T Parameter DC Characteristics Breakdown voltage µA (BR) Reverse current Forward voltage ...

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Electrical Characteristics at T Parameter AC Characteristics Diode capacitance MHz 100 MHz GHz ...

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Diode capacitance Parameter 0.5 pF 0.4 0.35 1 MHz 0.3 100 MHz 1 GHz 1.8 GHz 0.25 0.2 0.15 0 ƒ (I Forward resistance r f ...

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Forward current BAR90-02LRH / -098LRH 120 mA 100 Permissible Puls Load R thJS BAR90-02LRH / -098LRH 2 10 ...

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Permissible Puls Load R thJS BAR90-02LS 0,5 0,2 0,1 0,05 0 0,02 10 0,01 0,005 Insertion loss I = -|S | ...

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Package Outline Top view 2 1 Cathode marking 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" Copper Marking Layout (Example) Standard Packing Reel ø180 mm = 15.000 Pieces/Reel Reel ø330 ...

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Package Outline Top view Pin 1 marking 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.3 Marking Layout (Example) Standard Packing Reel ø180 mm = 15.000 ...

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Package TSSLP-2-1 9 BAR90... 2010-03-05 ...

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... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...