PEF80912HV14ZT Lantiq, PEF80912HV14ZT Datasheet - Page 4

PEF80912HV14ZT

Manufacturer Part Number
PEF80912HV14ZT
Description
Manufacturer
Lantiq
Datasheet

Specifications of PEF80912HV14ZT

Lead Free Status / Rohs Status
Supplier Unconfirmed
PEF 80912/80913
Revision History:
Previous Version:
Page
All
Table
Chapter 1.3
Chapter
2.4.5.1
Chapter
2.4.5.1
Figure 16
Chapter 4.1
Chapter 4.1
Chapter 4.2
Table 19
Chapter
4.6.3
Chapter 6.3
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Technologies Offices in Germany or the Infineon Technologies Companies and
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1,
Subjects (major changes since last revision)
Editorial changes, addition of notes for clarification etc.
introduced new version 80913 with extended performance of the U-interface
S-transceiver NT state machine:
added note : ’By setting the Test Mode pins TM0-2 to ’010’ / ’011’: Continuous
Pulses / Single Pulses, the S-transceiver starts sending the corresponding test
signal, but no state transition is invoked.’
C/I commands: removed ’unconditional command’ from description C/I-command
’DR’
Corrected figure: ’Complete Activation Initiated by Exchange’:
info4 is sent by the NT (not byTE)
Absolute Maximum Ratings: Maximum Voltage on VDD: 4.2V (before: 4.6V)
Refined references for ESD requirements:’ ...(CDM), EIA/JESD22-A114B (HBM) ---’
Input/output leakage current set to 10µA (before: 1µA)
U-transceiver characteristics: enhanced S/N+D for 80913 and threshold level for
80912 and 80913 distinguished
Parameters of the UVD/POR Circuit:
defined reduced range of hysteresis: min. 30mV/max. 90mV
relaxed upper limit of Detection Threshold to 2.92V (before: 2.9V)
defined max. rising VDD for power-on
External circuitry for T-SMINT updated
March 2001
Preliminary Data Sheet 10.00
DS 1

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