BTS650PE3180ANT Infineon Technologies, BTS650PE3180ANT Datasheet
BTS650PE3180ANT
Specifications of BTS650PE3180ANT
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BTS650PE3180ANT Summary of contents
Page 1
... Logic GND 1 ) With additional external diode Additional external diode required for energized inductive loads (see page 9). Infineon Technologies AG Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO Short circuit current limitation I Current sense ratio Current Gate Overvoltage ...
Page 2
... V is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839. Load dump Infineon Technologies AG Function Output; output to the load; pin and 7 must be externally shorted with each other especially in high current applications. Output; output to the load; pin and 7 must be externally shorted with each other especially in high current applications. Input ...
Page 3
... PCB is vertical without blown air Decrease of V below 10 V causes slowly a dynamic increase long as V > bIN bIN(u) max not subject to production test, specified by design about 105°C under these conditions See timing diagram on page 14. 12 Infineon Technologies AG R chip - case : ° 150 ° 150 ° ...
Page 4
... For all voltages 0 ... 34 V the device is fully protected against overtemperature and short circuit see diagram on page 7. When bIN (typ.) the charge pump is not active and See also V in circuit diagram on page 9. ON(CL) Infineon Technologies AG Symbol ° 150 ° (Pins Tab) L(inv > V ...
Page 5
... Note that under off-conditions (I is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Increasing reverse battery voltage capability is simply possible as described on page 9. Infineon Technologies AG Symbol T =-40°C: ...
Page 6
... ON I saturation, see . IS,lim ) not subject to production test, specified by design recommend the resistance between IN and GND to be less than 0 500 for turn-off. Consider that when the device is switched off (I reaches almost Infineon Technologies AG Symbol A,T =-40° =25° =150° A,T =-40° ...
Page 7
... Terms 4 V bIN PROFET bIS Two or more devices can easily be connected in parallel to increase load current capability. ) Low ohmic short may reduce the output current Power Transistor "OFF", potential defined by external impedance. 23 Infineon Technologies AG Output Current Sense level nominal H I IS, lim <nominal 23 ...
Page 8
... Short circuit detection Fault Condition: V > typ.) and t> t ON(SC) ON (80 ...350 µs). Short circuit Logic detection unit Infineon Technologies AG Current sense status output (typ.), R Z,IS devices are connected in parallel). I driven only by the internal circuit as long you want measure load currents ...
Page 9
... IN and IS pin should be about 120mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through R Infineon Technologies AG V disconnect with energized inductive bb load ...
Page 10
... with an approximate solution for R L · OUT(CL · L Infineon Technologies AG Maximum allowable load inductance for a single switch off j,start = 150° [µ OUT 1000000 V + OUT 100000 10000 1000 = 0). IS Externally adjustable current limit Load If the device is conducting, the sense current can be ...
Page 11
... Output negative voltage transient limit ON(CL -19 V typ OUT ) Latch except when OUT 0 V only if forced externally). So the device remains latched unless V between turn on and t . d(SC) ) Can be "switched off" by using a diode D 25 Infineon Technologies AG BTS 6510 550P 650P 25 < V after shutdown. In most cases V ON(SC) (see page 8) or leaving open the current sense output ...
Page 12
... Current sense ratio f(I ),T = -40°C ILIS ilis 30000 28000 26000 24000 22000 20000 max 18000 16000 typ 14000 12000 min 10000 Infineon Technologies AG Current sense ratio f 22000 20000 18000 16000 min 14000 12000 10000 ILIS I [A] L Current sense ratio f(I ILIS 22000 ...
Page 13
... ON ON(SC) switched off by internal short circuit detection. Typ. on-state resistance [mOhm 150° 85°C 6 25°C 4 -40° Infineon Technologies AG Typ. input current [mA] IN 1.6 1.4 1.2 d(SC) 1.0 0.8 0.6 0.4 = 150° static dynamic [V] bb Page 13 Data Sheet BTS650P ...
Page 14
... The sense signal is not valid during a settling time after turn-on/off and after change of load current. Figure 2b: Switching motors and lamps OUT Sense current saturation can occur at very high inrush currents (see I on page 6). IS,lim Infineon Technologies AG Figure 2c: Switching an inductive load dV/dtoff V OUT t off t slc(IS ...
Page 15
... Figure 4e: Over temperature Reset if T < Auto Restart V OUT T j Figure 6f: Under voltage restart of charge pump, over voltage clamp V OUT V IN dynamic, short 6 Undervoltage not below V bIN( bIN(u) bIN(ucp) Infineon Technologies ON(CL ON(CL) Page 15 Data Sheet BTS650P 2003-Oct-01 ...
Page 16
... Ordering code question please contact your nearest Infineon Technologies Q67060-S6308-A004 Office. Infineon Technologies Components may only be used in life- support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...