MT46V32M8TG-6T Micron Technology Inc, MT46V32M8TG-6T Datasheet - Page 2

MT46V32M8TG-6T

Manufacturer Part Number
MT46V32M8TG-6T
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46V32M8TG-6T

Organization
32Mx8
Density
256Mb
Address Bus
15b
Access Time (max)
700ps
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
175mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46V32M8TG-6T
Manufacturer:
XILINX
Quantity:
50
Part Number:
MT46V32M8TG-6TG
Manufacturer:
MT
Quantity:
20 000
Table 1:
Table 2:
Table 3:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Parameter
Configuration
Refresh count
Row address
Bank address
Column address
Speed Grade
Marking
-75E/-75Z
-75E
-75Z
-5B
-75
-6T
-5B
-75
-6
6T
-6
1
Key Timing Parameters
CL = CAS (READ) latency; MIN clock rate with 50% duty cycle at CL = 2 (-75E, -75Z), CL = 2.5 (-6, -6T, -75), and
CL = 3 (-5B)
Addressing
Speed Grade Compatibility
PC3200 (3-3-3) PC2700 (2.5-3-3) PC2100 (2-2-2) PC2100 (2-3-3) PC2100 (2.5-3-3) PC1600(2-2-2)
Notes:
CL = 2
Yes
-5B
133
133
133
133
100
1. The -5B device is backward compatible with all slower speed grades. The voltage range of
-5B device operating at slower speed grades is V
Clock Rate (MHz)
CL = 2.5
-6/-6T
167
167
167
133
133
Yes
Yes
Yes
16 Meg x 4 x 4 banks
2K (A0–A9, A11)
8K (A0–A12)
4 (BA0, BA1)
64 Meg x 4
8K
CL = 3
200
n/a
n/a
n/a
n/a
-75E
Yes
Yes
Yes
Yes
2
Data-Out Window Access Window DQS–DQ Skew
8 Meg x 8 x 4 banks
Micron Technology, Inc., reserves the right to change products or specifications without notice.
8K (A0–A12)
4 (BA0, BA1)
32 Meg x 8
1K (A0–A9)
1.6ns
2.1ns
2.0ns
2.5ns
2.5ns
-75Z
Yes
Yes
Yes
Yes
Yes
8K
256Mb: x4, x8, x16 DDR SDRAM
DD
= V
DD
Q = 2.5V ± 0.2V.
±0.70ns
±0.70ns
±0.70ns
±0.75ns
±0.75ns
Yes
Yes
Yes
Yes
Yes
Yes
-75
©2003 Micron Technology, Inc. All rights reserved.
4 Meg x 16 x 4 banks
16 Meg x 16
8K (A0–A12)
4 (BA0, BA1)
512 (A0–A8)
8K
+0.40ns
+0.40ns
+0.50ns
Features
+0.45ns
+0.50ns
Yes
Yes
Yes
Yes
Yes
Yes
-75

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