MT48LC4M16A2TG-8ELIT Micron Technology Inc, MT48LC4M16A2TG-8ELIT Datasheet - Page 43

• Manufacturer Part Number: MT48LC4M16A2TG-8ELIT
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC4M16A2TG-8ELIT

• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Access Time (max): 6ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 120mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Not Compliant

PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. N 12/08 EN
10. For a READ without auto precharge interrupted by a READ (with or without auto pre-
11. For a READ without auto precharge interrupted by a WRITE (with or without auto pre-
12. For a WRITE without auto precharge interrupted by a READ (with or without auto pre-
13. For a WRITE without auto precharge interrupted by a WRITE (with or without auto pre-
14. For a READ with auto precharge interrupted by a READ (with or without auto precharge),
15. For a READ with auto precharge interrupted by a WRITE (with or without auto precharge),
16. For a WRITE with auto precharge interrupted by a READ (with or without auto precharge),
17. For a WRITE with auto precharge interrupted by a WRITE (with or without auto precharge),
6. All states and sequences not shown are illegal or reserved.
7. READs or WRITEs to bank m listed in the Command (Action) column include READs or
8. Concurrent Auto precharge: Bank n will initiate the auto precharge command when its
9. Burst in bank n continues as initiated.
WRITEs with auto precharge enabled and READs or WRITEs with auto precharge disabled.
burst has been interrupted by bank m’s burst.
charge), the READ to bank m will interrupt the READ on bank n, CL later (Figure 12 on
page 25).
charge), the WRITE to bank m will interrupt the READ on bank n when registered
(Figures 14 and 15 on page 27). DQM should be used one clock prior to the WRITE com-
mand to prevent bus contention.
charge), the READ to bank m will interrupt the WRITE on bank n when registered (Figure 22
on page 32), with the data-out appearing CL later. The last valid WRITE to bank n will be
data-in registered one clock prior to the READ to bank m.
charge), the WRITE to bank m will interrupt the WRITE on bank n when registered
(Figure 20 on page 31). The last valid WRITE to bank n will be data-in registered one clock
prior to the READ to bank m.
the READ to bank m will interrupt the READ on bank n, CL later. The precharge to bank n
will begin when the READ to bank m is registered (Figure 29 on page 37).
the WRITE to bank m will interrupt the READ on bank n when registered. DQM should be
used two clocks prior to the WRITE command to prevent bus contention. The precharge to
bank n will begin when the WRITE to bank m is registered (Figure 30 on page 38).
the READ to bank m will interrupt the WRITE on bank n when registered, with the data-out
appearing CL later. The precharge to bank n will begin after
when the READ to bank m is registered. The last valid WRITE to bank n will be data-in regis-
tered one clock prior to the READ to bank m (Figure 31 on page 38).
the WRITE to bank m will interrupt the WRITE on bank n when registered. The precharge to
bank n will begin after
tered. The last valid WRITE to bank n will be data registered one clock prior to the WRITE to
bank m (Figure 32 on page 39).
t
WR is met, where
43
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
WR begins when the WRITE to bank m is regis-
64Mb: x4, x8, x16 SDRAM
t
WR is met, where
©2000 Micron Technology, Inc. All rights reserved.
Commands
t
WR begins