BTS737S2 Infineon Technologies, BTS737S2 Datasheet

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BTS737S2

Manufacturer Part Number
BTS737S2
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS737S2

Switch Type
High Side
Power Switch Family
BTS737S2
Input Voltage
-10 to 16V
Power Switch On Resistance
35mOhm
Output Current
5A
Number Of Outputs
4
Mounting
Surface Mount
Package Type
DSO
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Pin Count
28
Power Dissipation
3700W
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTS737S2
Manufacturer:
INFINEON
Quantity:
29 000
Part Number:
BTS737S2
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Smart High-Side Power Switch
Four Channels: 4 x 35mΩ Ω Ω Ω
Advanced Current Sense
Product Summary
General Description
Applications
Basic Functions
Protection Functions
Diagnostic Function
Infineon technologies
Operating Voltage
On-state Resistance
Nominal load current
Current limitation
N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS
Fully protected by embedded protection functions
µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads
All types of resistive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Very low standby current
Improved electromagnetic compatibility (EMC)
CMOS compatible input
Stable behaviour at undervoltage
Wide operating voltage range
Reverse battery protection without external components
(ReverSave    )
Short circuit protection
Overload protection
Current limitation
Thermal shutdown
Overvoltage protection (not load dump) without external
resistor
Loss of ground protection
Electrostatic discharge protection (ESD)
Proportional load current sense (with defined fault signal
during thermal shutdown)
Active channels one
V
R
I
I
L(NOM)
L(SCr)
bb(on)
ON
35mΩ
5.4A
21A
Page 1 of 1
4.5 ...40V
four parallel
9mΩ
11.1A
21A
Block Diagram
IS1
IS2
IS3
IS4
IN2
IN4
IN1
IN3
technology.
with
Package
P-DSO-28
Channel 1
Channel 2
Channel 3
Channel 4
Vbb
Logic
Logic
GND
ReverSave
BTS737S2
Load 4
Load 3
2001-07-13
Load 2
Load 1
   

Related parts for BTS737S2

BTS737S2 Summary of contents

Page 1

... Proportional load current sense (with defined fault signal during thermal shutdown) Infineon technologies 4.5 ...40V bb(on) four parallel 35mΩ 9mΩ ON 5.4A 11.1A 21A 21A Page BTS737S2 ReverSave with Package P-DSO-28  technology. Block Diagram Vbb IN1 Logic IS1 Channel 1 IS2 ...

Page 2

... Proportional sense current channel 1 control and protection circuit of channel 2 control and protection circuit of channel 3 control and protection circuit of channel 4 Page 2 BTS737S2 VBB OUT1 R 0 LOAD only active in off-state OUT2 OUT3 OUT4 2001-07-13 ...

Page 3

... GND1/2 Ground of chip 1 (channel 1,2) 9 GND3/4 Ground of chip 2 (channel 3,4) Infineon technologies Pin configuration (top view GND1/2 2 IN2 3 IN1 4 IS1 5 IS2 GND3/4 9 IN4 10 IN3 11 IS3 12 IS4 Page 3 BTS737S2 • OUT1 26 OUT1 25 OUT1 24 OUT2 23 OUT2 7 22 OUT2 8 21 OUT3 20 OUT3 19 OUT3 18 OUT4 17 OUT4 16 OUT4 2001-07-13 ...

Page 4

... 25° 85° one channel: two parallel channels: four parallel channels: IN: IS: require an external current limit for the GND and status pins (a 75 Ω bb(AZ) (one layer, 70 µ m thick) copper area for Page 4 BTS737S2 Symbol Values self-limited Load dump T -40 ...+150 j -55 ...

Page 5

... 25° 150° 25° 25°C: j one channel active: I L(NOM L(GNDhigh 90 OUT 10 OUT off dV/dt -dV/dt (one layer, 70 µ m thick) copper area for Page 5 BTS737S2 Values min typ Max -- -- Values min typ Max -- 5.0 5.4 -- 6.7 7.4 -- 10.5 11.1 -- ...

Page 6

... GND four channels on: I L(lim) each channel I L(SCr) T =25°C: t j,start off(SC) 11) =-40°C..25° ON(CL) =150° ∆ T require an external current limit for the GND and status pins (a 150 Ω bb(AZ) ON(CL) Page 6 BTS737S2 Values min typ Max 4 1 ...

Page 7

... If ground resistors R are used, add the voltage drop across these resistors. GND Infineon technologies Symbol each of the four channels - =25° =150° IN(T+) V IN(T-) ∆ 0 IN(off IN(on) Page 7 BTS737S2 Values min typ Max -- -- -- 120 2.5 3.5 6.0 1.7 -- 3.2 1 0.3 IN( 2001-07-13 ...

Page 8

... = IS(LL IS(LH) ±10% after IS static son(IS) R signal remains for t fault delay(fault) Page 8 BTS737S2 Values min typ -- 5 000 ILIS 4575 5000 4100 5000 4200 5200 3580 5800 4600 4900 4250 4900 4310 5100 3820 5600 4675 4900 4475 4900 4350 5000 4200 5200 5 ...

Page 9

... high impedance, potential depends on external circuit V Leadfram IN3 OUT1 IN4 OUT2 ND1 UT1 O UT2 I and therefore also the sense current L Page 9 BTS737S2 Current Sense nominal V fault 0 V fault 0 V fault 0 17) <nominal Leadfram IN3 IN4 12 OUT3 PROFET IS3 IS3 Chip 2 16 ...

Page 10

... Ω R GND V fault Reverse battery protection Ω GND In case of reverse battery the channel of the MOSFET is turned on. Temperature protection and sense functionality is not active during inverse current operation. Page 10 BTS737S2 OUT1 or OUT2 + Power GND = 21 V typ. ON(CL Logic IS V Integrated Z1 GND resistor ...

Page 11

... R L > 0 Ω : OUT E AS Maximum allowable load inductance for a single switch off j,start = 150° Ω [mH] 1000 100 10 1 0.1 Page OUT PROFET IS GND · · · ON(CL) · (1+ OUT(CL · (one channel BTS737S2 E Load (t) dt, L · OUT(CL [A] 2001-07-13 ...

Page 12

... Typ. on-state resistance high [mOhm 180 Typ. standby current 9...34 V, IN1,2,3,4 = low bb(off µ bb(off - Infineon technologies Tj = 150°C 25°C -40° [V] bb 100 150 200 T [°C] j Page 12 BTS737S2 2001-07-13 ...

Page 13

... Note, that the sense resistor may not fall short of a off minimum value of 500 Ω slc(IS ESD V fault t t soff(IS Page 13 BTS737S2 ) and sense voltage ( and I for three different sense L(lim) ILIS = 1 k Ω nominal > 500 Ω 2001-07- ...

Page 14

... S t Heating up may require several milliseconds, depending on external conditions typ. increases with decreasing temperature. LL(lim’) Figure 3b: Turn on into short circuit: shut down by overtemperature, restart by cooling (two parallel switched channels 1 and 2) IN1 L(SCp) t off(SC Page 14 BTS737S2 I L(SCr) V fault I L(SCr) V fault 2001-07-13 ...

Page 15

... Infineon technologies Figure 6b: Current sense ratio 10000 5000 [A] 18) This range for the current sense ratio refers to all devices. The accuracy of the k least by a factor of two by calibrating the value of k for every single device. ILIS Page 15 BTS737S2 18 ILIS [A] can be raised at ILIS 2001-07- ...

Page 16

... Life support devices or systems are intended ( implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail reasonably to assume that the health of the user or other persons may be endangered. Page 16 BTS737S2 your nearest Infineon technologies ) of ...

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