BTS117NK Infineon Technologies, BTS117NK Datasheet

BTS117NK

Manufacturer Part Number
BTS117NK
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS117NK

Switch Type
Low Side
Power Switch Family
BTS117
Power Switch On Resistance
90mOhm
Output Current
3.5A
Number Of Outputs
Single
Mounting
Through Hole
Package Type
TO-220AB
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Pin Count
3 +Tab
Power Dissipation
50W
Lead Free Status / Rohs Status
Not Compliant
Smart Lowside Power Switch
Features
• Logic Level Input
• Input Protection (ESD)
•=Thermal shutdown with latch
• Overload protection
• Short circuit protection
• Overvoltage protection
• Status feedback with external input resistor
• Analog driving possible
Application
• All kinds of resistive, inductive and capacitive loads in switching or
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS  chip on chip tech-
nology. Fully protected by embedded protected functions.
Current limitation
linear applications
1
IN
E S D
pro te ctio n
O v erloa d
lim ita tio n
dv /d t
te m pe rature
p ro te ctio n
lim ita tio n
C u rre n t
O ve r-
O ve rvoltag e
S h ort circ uit
p rotection
S ho rt c ircu it
Page 1
p rotection
p ro te ctio n
Product Summary
Drain source voltage
On-state resistance
Current limit
Nominal load current
Clamping energy
H IT F E T
S o u rce
D rain
L O A D
3
2
V bb
+
HITFET
V
R
I
I
E
D(lim)
D(ISO)
DS
AS
DS(on)
    = = = =
BTS 117
19.05.2000
1000 mJ
100 mΩ
3.5
60
M
7
V
A
A

Related parts for BTS117NK

BTS117NK Summary of contents

Page 1

... Analog driving possible Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V and applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS  chip on chip tech- nology ...

Page 2

Maximum Ratings °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection Continuous input current 1) -0.2V ≤ V ≤ 10V IN V < -0. > 10V IN IN ...

Page 3

Electrical Characteristics Parameter at T =25°C, unless otherwise specified j Characteristics Drain source clamp voltage ...+ 150° Off state drain current -40...+150 °C, V ...

Page 4

... Inverse Diode Inverse diode forward voltage = 300 µ 5*3.5A Device switched on into existing short circuit (see diagram Determination of I D(lim the device condition and a short circuit occurs, these values might be exceeded for max. 50 µs. Symbol I D(SCp) I D(lim) = 350 µ ...

Page 5

Block Diagramm Terms HITFET Input circuit (ESD protection) IN ESD-ZD I Source ESD zener diodes are not designed for DC current > >10V. IN Inductive and ...

Page 6

Maximum allowable power dissipation P = f(T ) tot c BTS 117 On-state resistance 3.5A; V =5V ...

Page 7

Typ. transfer characteristics =12V; T =25° Transient thermal impedance thJC p parameter : D = ...

Page 8

Application examples: Status signal of thermal shutdown by monitoring input current HITFET µC µ ∆ IN( ∆ V thermal shutdown Page 8 BTS 117 19.05.2000 ...

Page 9

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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