BTS611L1NK Infineon Technologies, BTS611L1NK Datasheet

BTS611L1NK

Manufacturer Part Number
BTS611L1NK
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS611L1NK

Switch Type
High Side
Power Switch Family
BTS611L1
Input Voltage
-10 to 16V
Power Switch On Resistance
160mOhm
Output Current
1.8A
Number Of Outputs
Dual
Mounting
Through Hole
Supply Current
4mA
Package Type
TO-220
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Pin Count
7 +Tab
Power Dissipation
36W
Lead Free Status / Rohs Status
Not Compliant
Smart Two Channel Highside Power Switch
Features
Application
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
1
Semiconductor Group
)
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of V
Electrostatic discharge (ESD) protection
feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve
loads
Replaces electromechanical relays, fuses and discrete circuits
C compatible power switch with diagnostic
With external current limit (e.g. resistor R
connection, reverse load current limited by connected load.
5
3
6
IN1
IN2
ST
PROFET
ESD
Voltage
Voltage
sensor
source
Logic
V
1 )
Logic
bb
protection
Overvoltage
protection
Level shifter
Charge
Charge
Level shifter
pump 1
pump 2
Rectifier 2
Rectifier 1
2
GND
Signal GND
GND
=150 ) in GND connection, resistor in series with ST
Current
Current
limit 1
limit 2
1 of 15
Product Summary
Overvoltage protection
Operating voltage
On-state resistance R
Load current (ISO)
Current limitation
Short to Vbb
Short to Vbb
Open load
unclamped
ind. loads 1
Open load
unclamped
ind. loads 2
detection 2
detection 1
Limit for
Limit for
Standard
protection
protection
Gate 2
Gate 1
1
Temperature
Temperature
sensor 1
sensor 2
7
channels:
TO-220AB/7
Straight leads
I
I
PROFET ® BTS611L1
L(ISO)
L(SCr)
R
ON
O1
GND
V
V
OUT2
+ V bb
OUT1
bb(AZ)
bb(on)
R
1
O2
each
200
2.3
1
7
4
7
4
Load GND
5.0 ... 34 V
Load
both
parallel
2003-Oct-01
SMD
100 m
4.4
43
1
4
7
V
A
A

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BTS611L1NK Summary of contents

Page 1

... CMOS compatible input Loss of ground and loss of V protection bb Electrostatic discharge (ESD) protection Application C compatible power switch with diagnostic feedback for 12 V and grounded loads All types of resistive, inductive and capacitve loads Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology ...

Page 2

... IN= low or high ) Load current (Short circuit current, see page 5) Operating temperature range Storage temperature range Power dissipation (DC Inductive load switch-off energy dissipation, single pulse V = 12V 150°C, T j,start C bb one channel, I both channels parallel, I see diagrams on page 9 Electrostatic discharge capability (ESD) (Human Body Model) acc ...

Page 3

... Thermal resistance chip - case, both channels: junction - ambient (free air): SMD version, device on PCB Electrical Characteristics Parameter and Conditions ° unless otherwise specified j bb Load Switching Capabilities and Characteristics On-state resistance (pin 1 each channel Nominal load current, ISO Norm (pin 0 °C ON ...

Page 4

Parameter and Conditions ° unless otherwise specified j bb Operating Parameters ) Operating voltage 6 Undervoltage shutdown Undervoltage restart Undervoltage restart of charge pump see diagram page 13 Undervoltage hysteresis V = ...

Page 5

... Protection Functions Initial peak short circuit current limit (pin Repetitive short circuit shutdown current limit (see timing diagrams, page 11 Output clamp (inductive load switch off OUT bb ON(CL) Thermal overload trip temperature Thermal hysteresis Reverse battery (pin Reverse battery voltage drop ...

Page 6

... Delay time for status with open load after switch off (other channel in off state (see timing diagrams, page 12 Delay time for status with open load after switch off (other channel in on state (see timing diagrams, page 12 Status invalid after positive input slope ...

Page 7

Truth Table Normal operation Open load Short circuit Overtemperature Undervoltage/ Overvoltage L = "Low" Level X = don't care H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page ...

Page 8

Status output R ST(ON) GND ESD-Zener diode: 6.1 V typ., max 5 mA; R < 380 at 1.6 mA, ESD zener diodes are not ST(ON used as voltage clamp at DC conditions. Operation in this mode may result ...

Page 9

... D are necessary. Semiconductor Group Inductive Load switch-off energy dissipation Energy stored in load inductance: While demagnetizing load inductance, the energy dissipated in PROFET with an approximate solution for Maximum allowable load inductance for a single switch off [mH] 1000 1 100 PROFET ® BTS611L1 OUT ...

Page 10

Typ. transient thermal impedance chip case Z = f(t ), one Channel active thJC p Z [K/W] thJC 10 1 0.1 0.01 1E-5 1E-4 1E-3 1E-2 Typ. transient thermal impedance chip case Z = f(t ), both Channel active thJC ...

Page 11

... OUT2 ST open drain Figure 2a: Switching a lamp OUT I L Semiconductor Group Both channels are symmetric and consequently the diagrams are valid for each channel as well as for permuted channels Figure 2b: Switching an inductive load OUT L(OL the time constant of load is too large, open-load-status may ...

Page 12

Figure 4a: Overtemperature: Reset if T < OUT T J Figure 5a: Open load: detection in ON-state, open load occurs in on-state IN1 IN2 channel 2: normal operation V OUT1 channel open ...

Page 13

Figure 6a: Undervoltage bb(under) V OUT ST open drain Figure 6b: Undervoltage restart of charge pump bb(over bb(o rst) bb(u rst) V bb(u cp) V bb(under) charge pump starts at V ...

Page 14

Package and Ordering Code All dimensions in mm Standard TO-220AB/7 BTS611L1 Q67060-S6302-A2 TO 220AB/7, Opt. E3230 BTS611L1 E3230 SMD TO 220AB/7, Opt. E3128 BTS611L1 E3128A T&R: Q67060-S6302-A4 Semiconductor Group Changed since 04.96 Date Change Ordering code Dec t d(ST OL4) ...

Page 15

... Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life- support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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