SI3865DV-T1-E3 Vishay, SI3865DV-T1-E3 Datasheet

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SI3865DV-T1-E3

Manufacturer Part Number
SI3865DV-T1-E3
Description
Manufacturer
Vishay
Datasheet

Specifications of SI3865DV-T1-E3

Switch Type
High Side
Power Switch Family
SI3865DV
Input Voltage
1.8 to 8V
Power Switch On Resistance
135mOhm
Output Current
2.7A
Number Of Outputs
Single
Mounting
Surface Mount
Package Type
TSOP
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Pin Count
6
Power Dissipation
830W
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3865DV-T1-E3
Manufacturer:
ROHM
Quantity:
3 122
The Si3865DV includes a p- and n-channel MOSFET in a
single TSOP-6 package. The low on-resistance p-channel
TrenchFET
n-channel, with an external resistor, can be used as a
Document Number: 70867
S-60515—Rev. A, 05-Apr-99
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
ON/OFF
R1
R2
C1
V
80-m
1.8 to 8
1.5 to 8
1 8
1.8 to 8
DS2
V
R2
IN
(V)
8
C
R1
-V Input
-V Logic Level Control
Optional Slew-Rate Control
Optional Slew-Rate Control
i
Low r
Pull-Up Resistor
is tailored for use as a load switch.
DS(on)
4
6
5
Si3865DV
Q2
Q1
TrenchFET
0.080 @ V
0.175 @ V
0.110 @ V
r
DS(on)
1
R2
IN
IN
IN
( )
= 4.5 V
= 2.5 V
= 1.8 V
Load Switch with Level-Shift
2, 3
6
Typical 10 k
Typical 0 to 100 k *
C
Typical 1000 pF
o
C1
to 1 m *
I
V
GND
New Product
D
LOAD
OUT
(A)
2.7
2.2
1.7
The
level-shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5-V. The Si3865DV operates on
supply lines from 1.8 to 8-V, and can drive loads up to 2.7 A.
The Si3865DV is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
Low Profile, Small Footprint TSOP-6 Package
3000-V ESD Protection On Input Switch, V
Adjustable Slew-Rate
40
32
24
16
8
0
0
Note: For R2 switching variations with other V
combinations See Typical Characteristics
R2 @ V
t
2
d(off)
Switching Variation
t
IN
r
=
R2 (k )
www.vishay.com FaxBack 408-970-5600
4
V, R1 =
t
f
Vishay Siliconix
I
V
C
C
L
ON/OFF
i
o
= 1 A
= 10 F
= 1 F
6
k
= 3 V
Si3865DV
t
d(on)
ON/OFF
IN
/R1
8
2-1

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SI3865DV-T1-E3 Summary of contents

Page 1

... GND Note: For R2 switching variations with other V combinations See Typical Characteristics The Si3865DV is ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types ...

Page 2

... ON Characteristics Input Voltage Range On-Resistance (p-channel On-State (p-channel) Drain-Current On-State (p-channel) Drain-Current Notes a. Surface Mounted on FR4 Board ON/OFF A c. Pulse test: pulse width 300 s, duty cycle 2%. www.vishay.com FaxBack 408-970-5600 2-2 New Product Si3865DV ON/OFF R2 Symbol ON/OFF a, b Continuous Pulsed stg ) ESD ...

Page 3

... T – Junction Temperature ( C) J Document Number: 70867 S-60515—Rev. A, 05-Apr-99 New Product 1.8 0.40 0.32 0.24 0. 0.08 0 1.6 2.0 0.4 0 0.1 0 100 125 150 Si3865DV Vishay Siliconix V vs DROP 1 ON/OFF T = 125 – DROP 1 ON/OFF T = 125 ...

Page 4

... Si3865DV Vishay Siliconix Normalized On-Resistance vs. Junction Temperature 1 1 ON/OFF 1 1.0 0.8 0.6 –50 – – Junction Temperature ( C) J Switching Variation ON/OFF d(off Switching Variation 1000 ON/OFF 800 600 t f 400 200 www.vishay.com FaxBack 408-970-5600 2-4 New Product 100 125 150 ...

Page 5

... Document Number: 70867 S-60515—Rev. A, 05-Apr-99 New Product Switching Variation 1 d(off ON/OFF d(on –2 – Square Wave Pulse Dureation (sec) Si3865DV Vishay Siliconix 60 Notes Duty Cycle Per Unit Base = R = 150 C/W thJA ( – thJA 4. Surface Mounted 10 100 600 www.vishay.com FaxBack 408-970-5600 2-5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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