MT29F1G08ABADAH4-IT:D Micron Technology Inc, MT29F1G08ABADAH4-IT:D Datasheet - Page 61

• Manufacturer Part Number: MT29F1G08ABADAH4-IT:D
• Manufacturer: Micron Technology Inc

Specifications of MT29F1G08ABADAH4-IT:D

• Cell Type: NAND
• Density: 8Gb
• Interface Type: Parallel
• Address Bus: 27b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 35mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

Figure 43: READ FOR INTERNAL DATA MOVE (00h-35h) Operation
Figure 44: READ FOR INTERNAL DATA MOVE (00h–35h) with RANDOM DATA READ (05h–E0h)
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
Cycle type
Cycle type
Cycle type
I/O[7:0]
I/O[7:0]
I/O[7:0]
RDY
RDY
RDY
1
Command
Command
00h
05h
Command
00h
Address
Address
C1
C1
Address
C1
Address
Address
C2
C2
Address
Address
C2
Address
Command
R1
E0h
Address
R1
Address
t
WHR
61
R2
Address Command
R2
Command
35h
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
Dk
OUT
1Gb x8, x16: NAND Flash Memory
35h
t
WB
Internal Data Move Operations
t WB
Dk + 1
D
OUT
t
R
t R
Dk + 2
D
t
OUT
RR
t RR
D
D0
© 2010 Micron Technology, Inc. All rights reserved.
OUT
D
OUT
Dn
D
…
OUT
Dn + 1
D
OUT
Dj + n
D
OUT
Dn + 2
D
OUT
1