MT29F1G08ABADAWP-IT:D Micron Technology Inc, MT29F1G08ABADAWP-IT:D Datasheet - Page 33
MT29F1G08ABADAWP-IT:D
Manufacturer Part Number
MT29F1G08ABADAWP-IT:D
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F1G08ABADAWP-ITD.pdf
(93 pages)
Specifications of MT29F1G08ABADAWP-IT:D
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT29F1G08ABADAWP-IT:D
Manufacturer:
PULSE
Quantity:
15 650
Part Number:
MT29F1G08ABADAWP-IT:D
Manufacturer:
MICRON/美光
Quantity:
20 000
READ ID Parameter Tables
Table 6: READ ID Parameters for Address 00h
b = binary; h = hexadecimal
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
Byte 0 – Manufacturer ID
Manufacturer
Byte 1 – Device ID
MT29F1G08ABADA
MT29F1G08ABBDA
MT29F1G16ABBDA
Byte 2
Number of die per CE
Cell type
Number of simultaneously
programmed pages
Interleaved operations be-
tween multiple die
Cache programming
Byte value
Byte 3
Page size
Spare area size (bytes)
Block size (without spare)
Organization
Serial access
(MIN)
Byte value
Byte 4
Internal ECC level
Planes per CE#
Plane size
Internal ECC
1.8V
3.3V
Options
Micron
1Gb, x8, 3.3V
1Gb, x8, 1.8V
1Gb, x16, 1.8V
1
SLC
1
Not supported
Supported
MT29F1G08ABADA
MT29F1G08ABBDA
MT29F1G16ABBDA
2KB
64B
128KB
x8
x16
25ns
20ns
MT29F1G08ABADA
MT29F1G08ABBDA
MT29F1G16ABBDA
4-bit ECC/512 (main) +
4 (spare) + 8 (parity)
bytes
1
1Gb
ECC disabled
ECC enabled
I/07
0
1
1
1
1
1
1
1
0
1
1
0
0
0
1
33
I/06
0
1
0
0
0
0
0
0
0
1
0
0
1
0
Micron Technology, Inc. reserves the right to change products or specifications without notice.
I/05
1
1
1
1
0
0
0
0
0
0
0
0
0
1Gb x8, x16: NAND Flash Memory
I/04
0
1
0
1
0
0
0
0
1
1
1
1
0
READ ID Parameter Tables
I/03
1
0
0
0
0
0
0
0
0
0
0
0
0
0
I/02
1
0
0
0
0
0
0
0
1
1
1
1
0
© 2010 Micron Technology, Inc. All rights reserved.
I/01
0
0
0
0
0
0
0
0
0
0
0
0
1
I/00
0
1
1
1
0
0
0
0
1
1
1
1
0
0xxx0b
1xxx0b
Value
000b
A1h
2Ch
B1h
F1h
00b
00b
00b
80h
80h
80h
01b
01b
95h
15h
55h
10b
00b
0b
1b
1b
0b
1b
0b
1b