MPC8541ECVTALF Freescale Semiconductor, MPC8541ECVTALF Datasheet - Page 16

• Manufacturer Part Number: MPC8541ECVTALF
• Description: IC MPU POWERQUICC III 783-FCPBGA
• Manufacturer: Freescale Semiconductor

Specifications of MPC8541ECVTALF

• Processor Type: MPC85xx PowerQUICC III 32-Bit
• Speed: 667MHz
• Voltage: 1.2V
• Mounting Type: Surface Mount
• Package / Case: 783-FCPBGA
• For Use With: MPC8548CDS - DEV TOOLS CDS FOR 8548CWH-PPC-8540N-VE - KIT EVAL SYSTEM MPC8540
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Features: -

DDR SDRAM
6
This section describes the DC and AC electrical specifications for the DDR SDRAM interface of the
MPC8541E.
6.1
Table 11
MPC8541E.
Table 12
16
I/O supply voltage
I/O reference voltage
I/O termination voltage
Input high voltage
Input low voltage
Output leakage current
Output high current (V
Output low current (V
MV
Notes:
1. GV
2. MV
3. V
4. Output leakage is measured with all outputs disabled, 0 V
Input/output capacitance: DQ, DQS, MSYNC_IN
Delta input/output capacitance: DQ, DQS
Note:
1. This parameter is sampled. GV
noise on MV
equal to MV
REF
TT
DD
REF
is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
input leakage current
DDR SDRAM
is expected to be within 50 mV of the DRAM GV
MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specification, Rev. 4.2
is expected to be equal to 0.5 × GV
provides the recommended operating conditions for the DDR SDRAM component(s) of the
provides the DDR capacitance.
DDR SDRAM DC Electrical Characteristics
Parameter/Condition
REF
REF
Parameter/Condition
. This rail should track variations in the DC level of MV
may not exceed ±2% of the DC value.
OUT
OUT
= 0.35 V)
= 1.95 V)
Table 11. DDR SDRAM DC Electrical Characteristics
DD
= 2.5 V ± 0.125 V, f = 1 MHz, T
Table 12. DDR SDRAM Capacitance
DD
, and to track GV
Symbol
MV
GV
I
VREF
V
I
V
I
V
I
OZ
OH
OL
TT
REF
IH
IL
DD
DD
Symbol
at all times.
≤
C
C
V
DIO
IO
OUT
DD
MV
MV
0.49 × GV
DC variations as measured at the receiver. Peak-to-peak
A
≤
= 25°C, V
REF
REF
GV
2.375
–15.2
–0.3
15.2
Min
–10
REF
—
DD
+ 0.18
– 0.04
.
.
DD
Min
—
6
OUT
= GV
MV
MV
0.51 × GV
GV
DD
REF
REF
2.625
DD
Max
/2, V
10
—
—
5
Max
0.5
+ 0.04
+ 0.3
– 0.18
8
OUT
DD
(peak to peak) = 0.2 V.
Freescale Semiconductor
Unit
Unit
mA
mA
pF
pF
μA
μA
V
V
V
V
V
Notes
Notes
—
—
—
—
—
1
1
2
1
3
4