MAX5073ETI Maxim Integrated Products, MAX5073ETI Datasheet - Page 2

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MAX5073ETI

Manufacturer Part Number
MAX5073ETI
Description
DC/DC Switching Converters 2.2MHz Buck or Boost Converter
Manufacturer
Maxim Integrated Products
Datasheet
ABSOLUTE MAXIMUM RATINGS
V+ to PGND............................................................-0.3V to +25V
SGND to PGND .....................................................-0.3V to +0.3V
VL to SGND...................-0.3V to the lower of +6V or (V+ + 0.3V)
BST1/VDD1, BST2/VDD2, DRAIN_, PGOOD2, PGOOD1 to
BST1/VDD1 to SOURCE1,
SOURCE_ to SGND................................................-0.6V to +25V
EN_ to SGND .............................................-0.3V to (VL to +0.3V)
CLKOUT, BYPASS, OSC, COMP1,
SOURCE1, DRAIN1 Peak Current ..............................5A for 1ms
2.2MHz, Dual-Output Buck or Boost Converter
with Internal Power MOSFETs
ELECTRICAL CHARACTERISTICS
(V+ = VL = 5.2V or V+ = 5.5V to 23V, EN_ = VL, SYNC = GND, I
ic), R
2
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
SYSTEM SPECIFICATIONS
Input Voltage Range
Operating Supply Current
V+ Standby Supply Current
Efficiency
STARTUP/VL REGULATOR
VL Undervoltage Lockout Trip
Level
VL Undervoltage Lockout
Hysteresis
VL Output Voltage
BYPASS OUTPUT
BYPASS Voltage
BYPASS Load Regulation
SOFT-START
Digital Ramp Period
Soft-Start Steps
SGND .................................................................-0.3V to +30V
BST2/VDD2 to SOURCE2 ....................................-0.3V to +6V
COMP2, SYNC, FB_ to SGND ..................-0.3V to (VL + 0.3V)
_______________________________________________________________________________________
OSC
= 10kΩ (circuit of Figure 1), T
PARAMETER
∆V
SYMBOL
V
A
UVLO
BYPASS
I
BYPASS
STBY
V+
= T
VL
I
η
Q
J
= T
MIN
(Note 2)
VL = V+
VL unloaded, no switching, V
12V, R
EN_ = 0, PGOOD_ floating, V+ = 12V,
R
EN_ = 0, PGOOD_ floating, V+ = 12V,
R
V
V
(f
VL falling
V+ = 5.5V to 23V, I
I
I
0 ≤ I
Internal 6-bit DAC
BYPASS
BYPASS
OSC
OSC
OUT1
OUT2
SW
to T
BYPASS
= 1.25MHz)
= 60kΩ (MAX5073ETI)
= 60kΩ (MAX5073ATI)
OSC
= 3.3V at 1.5A,
= 2.5V at 0.75A
MAX
= 0, R
= 0, R
, unless otherwise noted.) (Note 1)
= 60kΩ
≤ 50µA, R
OSC
OSC
VL
CONDITIONS
= 0mA, PGND = SGND, C
SOURCE
= 60kΩ (MAX5073ETI)
= 60kΩ (MAX5073ATI)
SOURCE2, DRAIN2 Peak Current ..............................3A for 1ms
VL, BYPASS to SGND Short Circuit............................Continuous
Continuous Power Dissipation (T
Package Junction-to-Case Thermal Resistance (θ
Operating Temperature Ranges:
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
*As per JEDEC51 standard.
28-Pin Thin QFN (derate 21.3mW/°C above +70°C).....2758mW*
MAX5073ETI (T
MAX5073ATI (T
OSC
= 60kΩ
= 0 to 40mA
FB_
V+ = VL = 5V
V+ = 12V
V+ = 16V
= 1V, V+ =
MIN
MIN
to T
to T
BYPASS
MAX
MAX
1.975
3.95
1.98
MIN
5.5
4.5
4.9
)............................-40°C to +85°C
0
) .........................-40°C to +125°C
A
= 0.22µF, C
= +70°C)
2048
TYP
2.00
2.00
175
2.2
0.6
0.6
4.1
5.2
82
80
78
64
2
VL
2.025
MAX
23.0
4.25
2.02
= 4.7µF (ceram-
5.5
1.2
1.4
5.5
10
4
JC
).......2°C/W
UNITS
cycles
clock
steps
f
OSC
mA
mA
mV
mV
%
V
V
V
V

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