FOD3182 Fairchild Semiconductor, FOD3182 Datasheet - Page 13

MOSFET & Power Driver ICs Driver

FOD3182

Manufacturer Part Number
FOD3182
Description
MOSFET & Power Driver ICs Driver
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FOD3182

Product
MOSFET Gate Drivers
Propagation Delay Time
65 ns
Supply Voltage (max)
30 V
Supply Voltage (min)
15 V
Supply Current
5 mA
Maximum Operating Temperature
+ 100 C
Mounting Style
Through Hole
Package / Case
DIP-8
Minimum Operating Temperature
- 40 C
Output Current
2 A
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Manufacturer
Quantity
Price
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FOD3182
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Manufacturer:
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Quantity:
20 000
Company:
Part Number:
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Company:
Part Number:
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PHOTOTRANSISTORS
* CTR option available
Phototransistor Output, DC Sensing Input
CATHODE
CATHODE
CATHODE
CATHODE
CATHODE
ANODE
ANODE
ANODE
ANODE
ANODE
N/C
N/C
Half-Pitch MFP (SO-4)
Base Connected, SO-8
Full-Pitch MFP (SO-4)
Dual-Channel, SO-8
1
2
1
2
3
4
1
2
3
4
1
2
& Package Type
Pin Connections
4
3 EMITTER
8
7
6
5
4
3 EMITTER
8
7
6
5
COLLECTOR
COLLECTOR
COLLECTOR
EMITTER
COLLECTOR
EMITTER
N/C
BASE
COLLECTOR
EMITTER
Product
Number
HMHA2801*
HMHA281
FODM121*
FODM124
FODM2701*
MOC205M
MOC206M
MOC207M
MOC211M
MOC212M
MOC213M
MOC216M
MOC217M
MOCD207M
MOCD208M
MOCD211M
MOCD213M
MOCD217M
Min.
100
100
100
100
100
100
100
20
50
50
40
20
80
50
50
50
40
63
1200
Max.
125
200
200
125
600
600
600
300
80
CTR (%)
I
F
(mA), V
10, 10
10, 10
10, 10
10, 10
10, 10
10, 10
10, 10
10, 10
1, 0.5
10, 5
10, 5
5, 5
5, 5
5, 5
5, 5
1, 5
1, 5
1, 5
CE
(V)
BV
Min.
(V)
80
80
80
80
40
70
70
70
30
30
30
30
30
70
70
30
70
30
CEO
Typ.
t
(µs)
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
ON
4
4
3
3
3
Typ.
t
(µs)
5.7
5.7
5.7
5.7
5.7
5.7
2.8
2.8
5.7
2.8
5.7
OFF
4
4
V
ISO
2500
2500
2500
2500
2500
2500
2500
2500
2500
2500
2500
2500
2500
3750
3750
3750
AC
3750
3750
RMS
www. f airc hilds emi.c om
(V)
–55 to +100
–55 to +100
–40 to +110
–40 to +110
–40 to +110
–40 to +100
–40 to +100
–40 to +100
–40 to +100
–40 to +100
–40 to +100
–40 to +100
–40 to +100
–40 to +100
–40 to +100
–40 to +100
–40 to +100
–40 to +100
T
OPR
(°C)
13

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