1N4448 Vishay / Small Signal & Opto Products (SSP), 1N4448 Datasheet - Page 2

• Manufacturer Part Number: 1N4448
• Description: Diode, Small Signal; 300 mA; 100 V (Min.); 1 V (Max.); 440 mW; 350 K/W; 100 V
• Manufacturer: Vishay / Small Signal & Opto Products (SSP)

Specifications of 1N4448

• Capacitance: 4 pF (Max.)
• Capacitance, Junction: 4 pF
• Current, Forward: 300 mA
• Current, Reverse: 5 μA
• Current, Surge: 2 A
• Package Type: DO-35
• Power Dissipation: 500 mW
• Primary Type: Rectifier
• Speed, Switching: Standard
• Temperature, Junction, Maximum: +175 °C
• Thermal Resistance, Junction To Ambient: 350 K⁄W
• Time, Recovery: 8 ns
• Time, Reverse Recovery: 8 nS (Max.)
• Voltage, Breakdown: 100 V (Min.)
• Voltage, Forward: 1000 mV
• Voltage, Repetitive Peak Reverse: 100 V
• Voltage, Reverse: 75 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

1N4448
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
T
2
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Rectification efficiency
Reverse recovery time
amb
amb
Figure 1. Forward Voltage vs. Junction Temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
94 9169
Figure 2. Forward Current vs. Forward Voltage
94 9171
1000
Parameter
100
1.2
1.0
0.8
0.6
0.4
0.2
0.1
10
1
0
- 30
0
1N4448
T
0.4
j
0
- Junction Temperature (°C)
V
F
- Forward Voltage (V)
0.8
30
I
F
Scattering Limit
V
0.1 mA
= 100 mA
1.2
60
R
I
= 0, f = 1 MHz, V
F
i
I
R
V
R
T = 25 °C
V
= I
I
j
HF
F
= 0.1 x I
R
= 100 µA, t
R
= 10 mA, V
= 20 V, T
90
1.6
= 2 V, f = 100 MHz
Test condition
= 10 mA, i
I
t
F
V
V
10 mA
p
I
F
1 m A
= 100 mA
R
R
= 0.3 ms
= 5 mA
R
= 20 V
= 75 V
120
, R
2.0
j
p
= 150 °C
/T = 0.01,
L
R
R
= 100 Ω
HF
= 6 V,
= 1 mA
= 50 mV
Symbol
V
C
V
V
(BR)
I
I
I
η
t
t
R
R
R
rr
rr
D
F
F
r
94 9098
Figure 3. Reverse Current vs. Reverse Voltage
1000
100
10
1
1
T
Min.
620
100
Scattering Limit
45
j
= 25 °C
V
R
- Reverse Voltage (V)
Typ.
10
Max.
1000
720
25
50
5
4
8
4
100
Unit
mV
mV
nA
µA
µA
pF
ns
ns
%
V