NTE123A NTE Electronics, Inc., NTE123A Datasheet
NTE123A
Manufacturer Part Number
NTE123A
Description
Transistor; TO-18; NPN; 40; 75; 6 V; 800 mA; 1.2 W; -65 to 200 degC; 40 V; 75 V
Manufacturer
NTE Electronics, Inc.
Type
Audio Amplifier, Switchr
Datasheet
1.NTE123A.pdf
(4 pages)
Specifications of NTE123A
Current, Collector
800 mA
Current, Collector Cutoff
0.1 μA
Current, Continuous Collector
800 mA
Current, Gain
300
Device Dissipation
1.2 W
Frequency
300 MHz
Gain, Dc Current, Maximum
300
Gain, Dc Current, Minimum
35 mA
Package Type
TO-18
Polarity
NPN
Power Dissipation
0.4 W
Primary Type
Si
Temperature Range, Junction, Operating
-65 to +200 °C
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Base
75 V
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Breakdown, Emitter To Base
6 V
Voltage, Collector To Base
75 V
Voltage, Collector To Emitter
40 V
Voltage, Collector To Emitter, Saturation
1 V
Voltage, Emitter To Base
6 V
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE123A (NPN) and NTE159M (PNP) are widely used “Industry Standard” complementary transis-
tors in a TO18 type case designed for applications such as medium–speed switching and amplifiers from
audio to VHF frequencies.
Features:
D Low Collector Saturation Voltage: 1V (Max)
D High Current Gain–Bandwidth Product: f
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Total Device Dissipation (T
Operating Temperature Range, T
Storage Temperature Range, T
NTE123A
NTE159M
NTE123A
NTE159M
NTE123A
NTE159M
NTE123A
NTE159M
Derate Above +25 C
NTE123A
NTE159M
Derate Above +25 C
Derate Above +25 C
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Silicon Complementary Transistors
EBO
NTE123A (NPN) & NTE159M (PNP)
CBO
A
C
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
= +25 C), P
stg
C
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
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General Purpose
D
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= 300MHz (Min) @ I
C
20mA
–65 to +200 C
–65 to +200 C
2.28mW/ C
6.85mW/ C
10.3mW/ C
800mA
600mA
0.4W
1.2W
1.8W
40V
60V
75V
60V
6V
5V
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NTE123A Summary of contents
Page 1
... NTE123A (NPN) & NTE159M (PNP) Silicon Complementary Transistors Description: The NTE123A (NPN) and NTE159M (PNP) are widely used “Industry Standard” complementary transis- tors in a TO18 type case designed for applications such as medium–speed switching and amplifiers from audio to VHF frequencies. ...
Page 2
... NTE123A NTE159M Emitter–Base Breakdown Voltage NTE123A NTE159M Collector Cutoff Current NTE123A NTE159M Collector Cutoff Current NTE123A NTE159M Emitter Cutoff Current (NTE123A Only) Base Cutoff Current NTE123A NTE159M ON Characteristics DC Current Gain NTE123A NTE159M Collector–Emitter Saturation Voltage NTE123A NTE159M Note 1. Pulse Test: Pulse Width ...
Page 3
... Small–Signal Characteristics Current Gain–Bandwidth Product NTE123A NTE159M Output Capacitance Input Capactiance NTE123A NTE159M Input Impedance (NTE123A Only) Voltage Feedback Ratio (NTE123A Only) Small–Signal Current Gain (NTE123A Only) Output Admittance (NTE123A Only) Collector–Base Time Constant (NTE123A Only) Noise Figure (NTE123A Only) Real Part of Common– ...
Page 4
Max .500 (12.7) Min Emitter 45 .041 (1.05) .230 (5.84) Dia Max .195 (4.95) Dia Max .030 (.762) Max .018 (0.45) Base Collector ...