1N4148WS-V-GS08 Vishay / Small Signal & Opto Products (SSP), 1N4148WS-V-GS08 Datasheet - Page 2

• Manufacturer Part Number: 1N4148WS-V-GS08
• Description: Diode, Small Signal; 350 mA; 1.0 V (Max.); 200 mW; 650 degC/W; 4 pF (Max.) @ 25
• Manufacturer: Vishay / Small Signal & Opto Products (SSP)

Specifications of 1N4148WS-V-GS08

• Capacitance: 4 pF (Max.) @ 25°C
• Capacitance, Junction: 4 pF
• Current, Forward: 150 mA
• Current, Reverse: 5 μA
• Current, Surge: 350 mA
• Package Type: SOD-123
• Power Dissipation: 200 mW
• Primary Type: Rectifier
• Speed, Switching: Fast
• Temperature, Junction, Maximum: +150 °C
• Thermal Resistance, Junction To Ambient: 650 °C⁄W
• Time, Recovery: 4 ns
• Time, Reverse Recovery: 4 nS (Max.) @ 25°C
• Voltage, Forward: 1200 mV
• Voltage, Reverse: 75 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

1N4148WS-V
Vishay Semiconductors
Thermal Characteristics
T
Note:
1)
Electrical Characteristics
T
Rectification Efficiency Measurement Circuit
2
Thermal resistance junction to ambient air
Junction temperature
Storage temperature
Forward voltage
Leakage current
Diode capacitance
Voltage rise when switching ON
(tested with 50 mA pulses)
Reverse recovery time
Rectification efficiency
amb
amb
Valid provided that electrodes are kept at ambient temperature.
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
17436
60 Ω
I
F
t
p
= 10 mA, I
tested with 50 mA pulses,
= 0.1 µs, rise time < 30 ns,
f = 100 MHz, V
V
R
f
p
= 20 V, T
V
= (5 to 100) kHz
Test condition
I
V
R
I
F
F
V
V
V
F
R
L
= V
RF
= 100 mA
R
R
R
= 10 mA
= 100 Ω
= 100 V
Test condition
= 1 mA, V
= 20 V
= 75 V
= 2 V
R
j
= 0 V
= 150 °C
RF
= 2 V
R
= 6 V,
Symbol
C
V
V
V
ην
I
I
I
I
t
R
R
R
R
rr
F
F
D
fr
Symbol
R
T
thJA
T
stg
2 nF
j
0.45
Min
5 kΩ
- 65 to + 150
Value
650
150
Typ.
1)
V
1000
1200
Max
100
O
2.5
25
50
5
4
4
Unit
K/W
°C
°C
Unit
mV
mV
nA
µA
µA
µA
pF
ns
V