IRFP360PBF Vishay PCS, IRFP360PBF Datasheet - Page 2

• Manufacturer Part Number: IRFP360PBF
• Description: MOSFET, Power; N-Ch; VDSS 400V; RDS(ON) 0.2Ohm; ID 23A; TO-247AC; PD 280W; VGS +/-20V
• Manufacturer: Vishay PCS

Specifications of IRFP360PBF

• Current, Drain: 23 A
• Gate Charge, Total: 210 nC
• Package Type: TO-247AC
• Polarization: N-Channel
• Power Dissipation: 280 W
• Resistance, Drain To Source On: 0.2 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 100 ns
• Time, Turn-on Delay: 18 ns
• Transconductance, Forward: 14 S
• Voltage, Breakdown, Drain To Source: 400 V
• Voltage, Forward, Diode: 1.8 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

IRFP360, SiHFP360
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
R
R
t
t
R
I
I
C
V
DS(on)
C
C
V
GS(th)
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
L
L
t
I
SM
t
thCS
thJA
thJC
oss
t
t
on
DS
SD
iss
rss
S
rr
fs
gs
gd
D
r
f
S
rr
g
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
R
J
DS
GS
GS
T
= 25 °C, I
G
Intrinsic turn-on time is negligible (turn-on is dominated by L
Reference to 25 °C, I
J
= 4.3 Ω, R
= 320 V, V
= 10 V
= 10 V
= 25 °C, I
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
DD
0.24
TEST CONDITIONS
DS
DS
GS
DS
-
-
= 200 V, I
= 400 V, V
= V
F
= 0 V, I
= 50 V, I
V
V
= 23 A, dI/dt = 100 A/µs
V
GS
DS
D
S
GS
GS
GS
I
= 8.3 Ω, see fig. 10
= 23 A, V
= ± 20 V
D
= 25 V,
, I
= 0 V,
= 0 V, T
= 23 A, V
D
D
see fig. 6 and 13
D
= 250 µA
D
= 250 µA
GS
= 14 A
= 23 A ,
I
D
D
= 0 V
= 14 A
GS
= 1 mA
J
G
G
= 125 °C
DS
b
= 0 V
= 320 V,
b
MAX.
D
S
b
0.45
D
S
b
40
b
-
b
MIN.
400
2.0
14
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
4500
1100
0.56
490
100
420
5.0
5.6
18
79
67
13
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.20
S
250
210
110
630
4.0
1.8
8.4
25
30
23
92
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
µA
nC
nH
µC
pF
ns
ns
Ω
V
V
S
A
V