1N5404-E3/54/BKN General Semiconductor / Vishay, 1N5404-E3/54/BKN Datasheet - Page 3

• Manufacturer Part Number: 1N5404-E3/54/BKN
• Description: Rectifier; 3 A (Max.) @ 105C IFAV@Tcase; 50 to 1000V VRSM; 200A IFRM, Cuttape
• Manufacturer: General Semiconductor / Vishay

Specifications of 1N5404-E3/54/BKN

• Capacitance, Junction: 30 pF
• Current Squared Time Rating: 3.7
• Current, Forward: 3 A
• Current, Reverse: 500 μA
• Current, Surge: 200 A
• Package Type: DO-201AD
• Primary Type: Rectifier
• Speed, Switching: Standard
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -50 to +150 °C
• Voltage, Forward: 1.2 V
• Voltage, Reverse: 400 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
0.01
0.01
100
100
0.1
0.1
10
10
1
1
0.4
0
Figure 4. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
0.6
Instantaneous Forward Voltage (V)
20
0.8
40
1.0
T
T
T
1.2
J
J
J
60
= 150 °C
= 100 °C
= 25 °C
T
Pulse Width = 300 µs
1 % Duty Cycle
J
= 25 °C
1.4
80
1.6
100
1.8
0.210 (5.3)
0.190 (4.8)
0.052 (1.32)
0.048 (1.22)
DIA.
DIA.
DO-201AD
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
1.0 (25.4)
MIN.
MIN.
100
100
0.1
10
10
1
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
0.1
1N5400 thru 1N5408
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
100
100
3