NTE3040 NTE Electronics, Inc., NTE3040 Datasheet
NTE3040
Manufacturer Part Number
NTE3040
Description
Optoisolater; Analog; 6-Pin DIP; Transistor; 1.1 V@ 10 mA; 60 mA; 3
Manufacturer
NTE Electronics, Inc.
Type
Analogr
Datasheet
1.NTE3040.pdf
(2 pages)
Specifications of NTE3040
Current, Forward
60 mA
Input Type
LED
Output Type
Transistor
Package Type
6-Pin DIP
Power Dissipation
200 mW @ 25 °C
Temperature, Operating, Maximum
+100 °C
Temperature, Operating, Minimum
-55 °C
Voltage, Collector To Base
70 V
Voltage, Collector To Emitter
30 V
Voltage, Forward
1.1 V (Typ.) @ 10 mA
Voltage, Isolation
1500 V
Voltage, Reverse
3 V
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Description:
The NTE3040 is a gallium arsenide, infrared emitting diode in a 6–Lead DIP type package coupled
with a silicon phototransistor.
Absolute Maximum Ratings: (T
Infrared Emitting Diode
Power Dissipation, P
Forward Current (Continuous), I
Forward Current (Peak), I
Reverse Voltage, V
Phototransistor
Power Dissipation, P
Collector to Emitter Voltage, V
Collector to Base Voltage, V
Emitter to Collector Voltage, V
Collector Current (Continuous), I
Total Device
Storage Temperature, T
Operating Temperature, T
Lead Soldering Temperature (10 seconds)
Surge Isolation Voltage (Input to Output)
Electrical Characteristics: (T
Infrared Emitting Diode
Forward Voltage
Reverse Current
Capacitance
Derate above 25 C ambient
(Pulse Width 1 sec, 300pps)
Derate above 25 C ambient
(Peak)
(RMS)
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R
D
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
ECO
A
C
= +25 C, unless otherwise specified)
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NPN Transistor Output
= +25 C, unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
C
I
R
Optoisolator
F
J
NTE3040
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
V
V = 0, f = 1MH
F
R
= 10mA
= 3V
Test Conditions
Z
Min
–
–
–
Typ
1.1
50
–
–55 to +150 C
–55 to +100 C
Max Unit
1.5
10
2.6mW/ C
2.6mW/ C
–
200mW
200mW
+260 C
100mA
1500V
1060V
60mA
mA
pf
V
30V
70V
3A
3V
7V
Related parts for NTE3040
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
nte quick cross for windows, cd, version 15
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
NTE829, Integrated Circuit Electronics Attenuator, 90dB @ 1kHz
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
DIODE, SMALL SIGNAL; 200 MA @ +25C IF; 100 V (MIN.) @ 100 UA, +25C; DO-35
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
DIODE, SMALL SIGNAL; 200 MA @ +25C IF; 100 V (MIN.) @ 100 UA, +25C; DO-35
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
Transistor; NPN; 100 V (Max.); 100 V (Max.); 5 V (Max.); 15 A (Max.); 40 @ 4 V
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Diode, Zener, 00.0V, 1W, DO-41; Voltage, Zener; Zener Impedance, Maximum
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
TRANSISTOR, PNP, GENERAL PURPOSE, PKG STYLE TO-92
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
CIRCUIT; TO-220; 40V; 0.01 %/V (TYP.) LINE REGULATION; 18 MV%/VO (TYP.)
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
Relay; SSR; Power; SPST-NO; Cur-Rtg 40A; Ctrl-V 3.5-32DC; Vol-Rtg 0-100DC; Pnl-Mnt
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Diode, Zener; 12 V @ 21 mA; 1 W @ +50C; DO-41; 700 Ohms @ 0.25 mA; +200; -65
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
TRANSISTOR, N-CHANNEL; N-CHANNEL; 1.2 OHMS (TYP.); 60V; +/- 20V; 115MA DRAIN
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
Relay; SSR; Power; SPST-NO; Cur-Rtg 40A; Ctrl-V 3-32DC; Vol-Rtg 80-530AC; Pnl-Mnt
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Specifications: Manufacturer: NTE ; RoHS: Details
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Rectifier, Bridge; Silicon Bridge Rectifier; 200 V; 400 A; 25; Thru Hole Mount
Manufacturer:
NTE Electronics, Inc.
Datasheet:
NTE3040 Summary of contents
Page 1
... Description: The NTE3040 is a gallium arsenide, infrared emitting diode in a 6–Lead DIP type package coupled with a silicon phototransistor. Absolute Maximum Ratings: (T Infrared Emitting Diode Power Dissipation Derate above 25 C ambient Forward Current (Continuous), I Forward Current (Peak (Pulse Width 1 sec, 300pps) Reverse Voltage, V ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Phototransistor Collector–Emitter Breakdown Voltage Collector–Base Breakdown Voltage Emitter–Collector Breakdown Voltage Collector Dark Current Capacitance Coupled Characteristics DC Current Transfer Ratio Collector–Emitter Saturation Voltage Isolation Resistance Input to Output Capacitance Switching Speeds .200 (5.08) Max .085 ...