MJ10016 NTE Electronics, Inc., MJ10016 Datasheet
MJ10016
Manufacturer Part Number
MJ10016
Description
transistor bipolar Darlington 500v to 204e
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, High Voltage, Power, Switchr
Datasheet
1.MJ10016.pdf
(2 pages)
Specifications of MJ10016
Current, Gain
10
Current, Input
10 A
Current, Output
50 A
Package Type
TO-3
Polarity
NPN
Power Dissipation
250 W
Primary Type
Si
Voltage, Collector To Emitter, Saturation
5 V
Voltage, Input
8 V
Voltage, Output
500 V
Lead Free Status / Rohs Status
RoHS Compliant part
Available stocks
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Manufacturer
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Price
Description:
The MJ10015 and MJ10016 are Darlington transistors in a TO3 type package designed for high−
voltage, high−speed, power switching in inductive circuits where fall time is critical. They are par-
ticularly suited for line operated switch−mode applications.
Applications:
D Continuous Collector Current (I
D Switching Regulators
D Inverters
D Solenoid and Relay Drivers
D Motor Controls
Absolute Maximum Ratings:
Collector−Emitter Voltage, V
Collector−Emitter Voltage, V
Emitter−Base Voltage, V
Collector Current
Base Current, I
Total Power Dissipation, P
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Case, R
Electrical Characteristics: (T
Off Characteristics
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
MJ10015
MJ10016
MJ10015
MJ10016
Derate Above +25°C
MJ10016
MJ10015
Continuous, I
Peak, I
T
T
C
C
= +25°C
= +100°C
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CM
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
w
CEV
CEO(SUS)
/Base−Emitter Speedup Diode
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
V
= +25°C unless otherwise specified)
Symbol
T−NPN, Si, Darlington
CEO(SUS)
MJ10015 & MJ10016
C
I
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
CEV
= 50A)
(
)
I
V
V
j
thJC
C
CEV
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100mA, I
= 2.0V, I
= Rated Value, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
c
B
= 0
= 0, V
CLAMP
BE(OFF)
= Rated V
= 1.5V
CEO
Min Typ Max Unit
400
500
−
−
−65° to +200°C
−65° to +200°C
−
−
−
−
0.25
350
1.43W/°C
−
−
0.7°C/W
250W
143W
600V
700V
400V
500V
8.0V
mA
mA
50A
75A
10A
V
V
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MJ10016 Summary of contents
Page 1
... Description: The MJ10015 and MJ10016 are Darlington transistors in a TO3 type package designed for high− voltage, high−speed, power switching in inductive circuits where fall time is critical. They are par- ticularly suited for line operated switch−mode applications. Applications: D Continuous Collector Current (I ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter On Characteristics (Note 1) DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Diode Forward Voltage Dynamic Characteristics Output Capacitance Switching Characteristics Delay Time Rise Time Storage Time Fall Time Note 1. Pulse Test: Pulse ...