1N4150W-V-GS18 Vishay / Small Signal & Opto Products (SSP), 1N4150W-V-GS18 Datasheet - Page 2

• Manufacturer Part Number: 1N4150W-V-GS18
• Description: Diode, Small Signal; 200 mA; 1 V (Max.); 410 mW; 50 V sod123, SM
• Manufacturer: Vishay / Small Signal & Opto Products (SSP)

Specifications of 1N4150W-V-GS18

• Current, Forward: 200 mA
• Package Type: SOD-123
• Power Dissipation: 410 mW
• Primary Type: Rectifier
• Speed, Switching: Fast
• Temperature, Junction, Maximum: +150 °C
• Thermal Resistance, Junction To Ambient: 450 °C⁄W
• Time, Reverse Recovery: 4.0 nS (Max.)
• Voltage, Forward: 1 V
• Voltage, Repetitive Peak Reverse: 50 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

1N4150W-V
Vishay Semiconductors
Electrical Characteristics
T
Package Dimensions in mm (Inches)
www.vishay.com
2
Forward voltage drop
Reverse current
Reverse recovery time
amb
= 25 °C, unless otherwise specified
Parameter
1.70 (0.067)
1.40 (0.055)
0.55 (0.022)
I
V
I
to I
F
F
R
= 200 mA
= I
0.1 (0.004) max.
rr
= 50 V
Cathode Band
R
= 0.1I
= ( 10 to 200) mA
Test condition
F
1.35 (0.053) max.
0.72 (0.028)
Mounting Pad Layout
Symbol
0.25 (0.010) min.
V
I
R
F
1.40 (0.055)
Min
0.15 (0.006) max.
ISO Method E
Typ.
17432
Document Number 85720
Max
100
1.0
4.0
Rev. 1.2, 06-Apr-05
Unit
nA
ns
V