NTE99 NTE Electronics, Inc., NTE99 Datasheet

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NTE99

Manufacturer Part Number
NTE99
Description
T-NPN SI-PWR DARL HV AMP
Manufacturer
NTE Electronics, Inc.
Type
High Voltage, Powerr
Datasheet

Specifications of NTE99

Current, Gain
10
Current, Input
10 A
Current, Output
50 A
Package Type
TO-3
Polarity
NPN
Power Dissipation
250 W
Primary Type
Si
Resistance, Thermal, Junction To Ambient
0.7
Voltage, Collector To Emitter, Saturation
5 V
Voltage, Input
8 V
Voltage, Output
400 V
Lead Free Status / Rohs Status
RoHS Compliant part

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTE994M
Manufacturer:
NTE
Quantity:
300
Description:
The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high–voltage,
high–speed, power switching in inductive circuits where fall time is critical. This device is particularly
suited for line–operated switchmode applications.
Applications:
D Switching Regulators
D Motor Controls
D Inverters
D Solenoid and Relay Drivers
Features:
D Fast Turn–Off Times:
D Operating Temperature Range: –65 to +200 C
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation, P
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Maximum Lead Temperature (During Soldering, 1/8” from case for 5sec), T
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle
Continuous
Peak (Note 1)
Continuous
Peak (Note 1)
T
Derate Above 25 C
T
C
C
= +25 C
= +100 C
1.0 s (max) Inductive Crossover Time – 20 Amps
2.5 s (max) Inductive Storage Time – 20 Amps
B
Darlington
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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EB
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
CEV
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stg
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
w
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
/Base–Emitter Speed–up Diode
J
thJC
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NTE99
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10%.
L
. . . . . . . . . . . .
–65 to +200 C
–65 to +200 C
1.43W/ C
0.7 C/W
+275 C
250W
143W
400V
600V
50A
75A
10A
15A
8V

Related parts for NTE99

NTE99 Summary of contents

Page 1

... Darlington Description: The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. This device is particularly suited for line–operated switchmode applications. Applications: D Switching Regulators D Motor Controls ...

Page 2

Electrical Characteristics: (T Parameter OFF Characteristics (Note 2) Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 2) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Diode Forward Voltage Dynamic Characteristic Output Capacitance Switching Characteristics Resistive ...

Page 3

Max .350 (8.89) .312 (7.93) Min Emitter .215 (5.45) .430 (10.92) Base .875 (22.2) Dia Max .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .188 (4.8) R Max .525 (13.35) R Max Collector/Case Seating Plane ...

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