Description:
The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high–voltage,
high–speed, power switching in inductive circuits where fall time is critical. This device is particularly
suited for line–operated switchmode applications.
Applications:
D Switching Regulators
D Motor Controls
D Inverters
D Solenoid and Relay Drivers
Features:
D Fast Turn–Off Times:
D Operating Temperature Range: –65 to +200 C
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation, P
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Maximum Lead Temperature (During Soldering, 1/8” from case for 5sec), T
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle
Continuous
Peak (Note 1)
Continuous
Peak (Note 1)
T
Derate Above 25 C
T
C
C
= +25 C
= +100 C
1.0 s (max) Inductive Crossover Time – 20 Amps
2.5 s (max) Inductive Storage Time – 20 Amps
B
Darlington
C
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EB
D
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CEO
CEV
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stg
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Silicon NPN Transistor
w
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/Base–Emitter Speed–up Diode
J
thJC
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NTE99
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10%.
L
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–65 to +200 C
–65 to +200 C
1.43W/ C
0.7 C/W
+275 C
250W
143W
400V
600V
50A
75A
10A
15A
8V