NTE382 NTE Electronics, Inc., NTE382 Datasheet
NTE382
Manufacturer Part Number
NTE382
Description
Transistor; NPN; 120 V (Max.); 100 V (Max.); 5 V (Max.); 1 A (Max.); 5 V (Min.)
Manufacturer
NTE Electronics, Inc.
Type
Driverr
Datasheet
1.NTE382.pdf
(2 pages)
Specifications of NTE382
Complement To
PNP
Current, Collector
1 A
Current, Collector Cutoff
10 uA (Max.)
Current, Continuous Collector
1 A (Max.)
Current, Gain
320
Device Dissipation
0.9 W
Frequency
140 MHz
Gain, Dc Current, Minimum
160
Material Type
Silicon
Package Type
R-245
Polarity
NPN
Power Dissipation
900 mW
Primary Type
Si
Temperature Range, Junction, Operating
150°C (Max.)
Transistor Polarity
NPN
Transistor Type
NPN
Voltage, Base To Emitter
1.5 V (Max.)
Voltage, Breakdown, Collector To Base
120 V (Min.)
Voltage, Breakdown, Collector To Emitter
100 V
Voltage, Breakdown, Emitter To Base
5 V (Min.)
Voltage, Collector To Base
120 V
Voltage, Collector To Emitter
100 V
Voltage, Collector To Emitter, Saturation
1 V
Voltage, Emitter To Base
5 V
Voltage, Saturation, Collector To Emitter
1.0 V (Max.)
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Voltage
Current Gain–Bandwidth Product
Capacitance
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EBO
CBO
NTE382 (NPN) & NTE383 (PNP)
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Audio Frequency Driver
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
A
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
V
V
V
Symbol
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)CBO
(BR)CEO
(BR)EBO
I
CE(sat)
V
C
h
CBO
f
FE
BE
T
ob
I
I
I
V
V
V
I
V
V
V
C
C
E
C
CB
CE
CE
CE
CE
CB
= 10 A, I
= 10 A, I
= 1mA, R
= 500mA, I
= 100V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, I
Test Conditions
C
C
C
C
C
E
BE
E
= 150mA
= 500mA
= 150mA
= 150mA
= 0
= 0
E
B
= 0, f = 1MHz
=
= 0
= 50mA
Min
120
100
160
30
5
–
–
–
–
–
Typ
–55 to +150 C
140
20
–
–
–
–
–
–
–
–
Max Unit
320
1.0
1.5
10
–
–
–
–
–
–
900mW
+150 C
120V
100V
MHz
pF
V
V
V
V
V
A
5V
1A
2A
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NTE382 Summary of contents
Page 1
... NTE382 (NPN) & NTE383 (PNP) Silicon Complementary Transistors Absolute Maximum Ratings: (T Collector–Base Voltage, V CBO Collector–Emitter Voltage, V Emitter–Base Voltage, V EBO Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Max .492 (12.5) Min .102 (2.6) Max .102 (2.6) Max .018 (0.48) .118 (3.0) Max .236 (6.0)Dia Max .024 (0.62) Max .059 (1.5) Typ .197 (5.0) .102 (2.6) Max .102 (2.6) Max ...