NTE133 NTE Electronics, Inc., NTE133 Datasheet
NTE133
Manufacturer Part Number
NTE133
Description
Transistor, JFET; N Channel JFET Silicon; 300 mW; -55 degC; 150 degC
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE133.pdf
(2 pages)
Specifications of NTE133
Channel Type
N-Channel
Current, Drain
15 mA
Current, Gate
10 mA
Current, Gate Operating
–1 nA
Current, Gate Reverse
–1 nA
Package Type
TO-106
Polarization
N-Channel
Power Dissipation
300 mW
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
–65 °C
Transistor Type
N-Channel
Voltage, Breakdown, Gate To Source
–25 V
Voltage, Drain To Gate
25 V
Voltage, Drain To Source
25 V
Voltage, Gate To Source, Breakdown
–25 V
Voltage, Gate To Source, Cut-off
–6.5 V
Absolute Maximum Ratings: (T
Drain–Source Voltage, V
Drain–Gate Voltage, V
Gate–Source Voltage, V
Gate Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1/16” from case for 10sec), T
Electrical Characteristics: (T
Gate–Source Breakdown Voltage
Gate Reverse Current
Gate–Source Cutoff Voltage
Gate–Source Voltage
Zero–Gate–Voltage Drain Current
Forward Transfer Admittance
Derate Above 25 C
Parameter
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DG
N–Channel JFET Silicon Transistor
GS
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General Purpose AF Amplifier
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
stg
A
= +25 C unless otherwise specified)
V
A
Symbol
V
(BR)GSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
GS(off)
I
V
= +25 C unless otherwise specified)
|y
GSS
DSS
GS
fs
|
D
J
I
V
V
I
I
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G
D
D
NTE133
GS
GS
DS
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1 A, V
= 1 A, V
= 50 A, V
= 15V, V
= 15V, V
= 20V, V
= 20V, V
Test Conditions
DS
DS
DS
GS
GS
DS
DS
= 15V
= 0
= 15V
= 0
= 0, T
= 0
= 0, f = 1kHz
A
= +150 C
L
. . . . . . . . . . . . . . . . . . .
1000
–0.4
Min
–25
0.5
–
–
–
Typ
–
–
–
–
–
–
–
–55 to +150 C
–55 to +150 C
7500
Max
–6.5
–6.0
–1
–1
15
–
2mW/ C
300mW
+260 C
10mA
Unit
–25V
mA
mho
nA
V
V
V
25V
25V
A
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NTE133 Summary of contents
Page 1
... Lead Temperature (During Soldering, 1/16” from case for 10sec), T Electrical Characteristics: (T Parameter Gate–Source Breakdown Voltage Gate Reverse Current Gate–Source Cutoff Voltage Gate–Source Voltage Zero–Gate–Voltage Drain Current Forward Transfer Admittance NTE133 General Purpose AF Amplifier = +25 C unless otherwise specified +25 C ...
Page 2
Min Seating Plane .018 (0.45) Source .207 (5.28) Dia .180 (4.57) .500 (12.7) Min .100 (2.54) Dia Drain Gate ...