NTE107 NTE Electronics, Inc., NTE107 Datasheet
NTE107
Manufacturer Part Number
NTE107
Description
Transistor; NPN; TO-92; 12 V; 30 V; 3 V; 25 mA; 200 mW; 12 V; 30 V
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE107.pdf
(2 pages)
Specifications of NTE107
Current, Collector
25 mA
Package Type
TO-92
Power Dissipation
200 mW
Temperature, Junction, Maximum
100 °C
Transistor Type
NPN
Voltage, Breakdown, Collector To Base
30 V
Voltage, Breakdown, Collector To Emitter
12 V
Voltage, Breakdown, Emitter To Base
3 V
Voltage, Collector To Base
30 V
Voltage, Collector To Emitter
12 V
Voltage, Emitter To Base
3 V
Description:
The NTE107 is a silicon NPN planar epitaxial transistor in a TO92 type package designed specifically
for high frequency applications. This device is suitable for use as an oscillator in UHF television tuners.
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Lead temperature (During Soldering, 1/16” 1/32” from case, 10sec), T
Electrical Characteristics: (T
Note 1. Pulse test: Pulse Width = 1 s, Duty Cycle = 1%.
Static Characteristics
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Forward Current Transfer Ratio
Collector Saturation Voltage
Derate above +25 C
Parameter
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
A
CBO
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UHF Oscillator for Tuner
= +25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
A
V
V
J
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
= +25 C unless otherwise specified)
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
I
I
h
CBO
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE107
I
I
I
V
V
V
I
C
CEO
E
C
CB
EB
CE
= 100 A
= 100 A
= 10mA, I
= 2V, I
= 15V, I
= 10V, I
= 3mA, Note 1
Test Conditions
C
E
C
B
= 0
= 0
= 1mA
= 8mA
L
. . . . . . . . . . . . . . .
Min Typ Max Unit
30
12
20
3
–
–
–
75
–55 to +125 C
–
–
–
–
–
–
2.67mW/ C
0.5
0.5
0.6
–
–
–
–
200mW
+100 C
+260 C
25mA
30V
12V
V
V
V
V
A
A
3V
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NTE107 Summary of contents
Page 1
... Description: The NTE107 is a silicon NPN planar epitaxial transistor in a TO92 type package designed specifically for high frequency applications. This device is suitable for use as an oscillator in UHF television tuners. Absolute Maximum Ratings: (T Collector–Base Voltage, V CBO Collector–Emitter Voltage, V Emitter–Base Voltage, V ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Dynamic Characteristics Current Gain–Bandwidth Product Output Capacitance Noise Figure .100 (2.54) .105 (2.67) Max .205 (5.2) Max = +25 C unless otherwise specified) A Symbol Test Conditions 5mA ...