NTE3083 NTE Electronics, Inc., NTE3083 Datasheet
NTE3083
Manufacturer Part Number
NTE3083
Description
Optoisolator; Analog; 6-Pin DIP; Darlington; DIP-6
Manufacturer
NTE Electronics, Inc.
Type
Analogr
Datasheet
1.NTE3083.pdf
(2 pages)
Specifications of NTE3083
Input Type
LED
Output Type
Darlington
Package Type
6-Pin DIP
Description:
The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo–
darlington in a 6–Lead DIP type package.
Features:
D High Sensitivity: 1mA on the Input will Sink a TTL gate
D High Isolation: 3550VDC, 10
Absolute Maximum Ratings:
Storage Temperature Range, T
Operating Temperature Range, T
Lead Temperature (During Soldering, 10sec), T
Total Power Dissipation (T
Input to Output Isolation Voltage (1sec), V
Input Diode
Forward Current, I
Reverse Voltage, V
Peak Forward Current (1 s pulse, 300pps), I
Output Darlington
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Electro–Optical Characteristics: (T
Isolation Between Emitter and Detector
Capacitance
Resistance
Voltage Breakdown
Derate Linearly to 100 C
Parameter
F
C
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
NPN Darlington Transistor Output
A
CBO
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
opr
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, 0.5pF
C
R
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
iso
iso
iso
= +25 C unless otherwise specified)
D
Optoisolator
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ISOL
NTE3083
f = 1MHz
V = 500VDC
t = 1sec
F
peak
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3550
10
Min
–
11
10
Typ
0.5
–
–65 to +150 C
–55 to +100 C
12
Max Unit
3.3mW/ C
–
–
–
3550VDC
250mW
+260 C
125mA
60mA
VDC
pF
30V
30V
3V
3A
6V
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NTE3083 Summary of contents
Page 1
... NPN Darlington Transistor Output Description: The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo– darlington in a 6–Lead DIP type package. Features: D High Sensitivity: 1mA on the Input will Sink a TTL gate D High Isolation: 3550VDC, 10 Absolute Maximum Ratings: ...
Page 2
Electro–Optical Characteristics (Cont’d): (T Parameter Emitter (GaAs LED) Forward Voltage Reverse Voltage Junction Capacitance Detector (Silicon Photo–Darlington) Collector Breakdown Voltage Base Breakdown Voltage Emitter Breakdown Voltage Collector Leakage Current Saturation Voltage Base Photo–Current Darlington Gain Collector–Emitter Capacitance Switching Times, Coupled ...