NTE48 NTE Electronics, Inc., NTE48 Datasheet
NTE48
Manufacturer Part Number
NTE48
Description
Transistor, NPN, Darlington
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, High Currentr
Datasheet
1.NTE48.pdf
(2 pages)
Specifications of NTE48
Current, Gain
25000
Current, Output
1000 mA
Package Type
TO-92
Polarity
NPN
Power Dissipation
2.5 W
Primary Type
Si
Resistance, Thermal, Junction To Ambient
50
Voltage, Collector To Emitter, Saturation
1.5 V
Voltage, Input
12 V
Voltage, Output
50 V
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Electrical Characteristics: (T
OFF Characteristics
Collector–Emitter Breakdown
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage
Collector Cutoff Voltage
Emitter Cutoff Current
Voltage
Derate Above 25 C
Derate Above 25 C
Parameter
Darlington, General Purpose Amplifier,
EBO
CBO
A
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CES
= +25 C), P
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)CES
(BR)CBO
(BR)EBO
I
I
CBO
EBO
High Current
D
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
E
NTE48
CB
BE
thJA
= 10 A, I
= 1mA, I
= 1.0 A, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10V, I
= 40V, I
Test Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
C
C
E
E
= 0, Note 1
= 0
= 0
= 0
= 0
Min
600
50
12
–
–
Typ
–
–
–
–
–
–55 to +150 C
–55 to +150 C
Max Unit
100
100
8.0mW/ C
–
–
–
20mW/ C
125 C/W
1000mA
50 C/W
1.0W
2.5W
nA
nA
V
V
V
50V
60V
12V
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NTE48 Summary of contents
Page 1
... Emitter–Base Breakdown Voltage Collector Cutoff Voltage Emitter Cutoff Current NTE48 Silicon NPN Transistor High Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter ON Voltage Small–Signal Characteristics Current Gain–Bandwidth Product Collector–Base Capacitance Note 1. Pulse Test: Pulse Width +25 C unless otherwise specified) ...