SI4936ADY-T1-E3 Siliconix / Vishay, SI4936ADY-T1-E3 Datasheet
SI4936ADY-T1-E3
Manufacturer Part Number
SI4936ADY-T1-E3
Description
MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.032Ohm; ID 4.4A; SO-8; PD 1.1W; VGS +/-20
Manufacturer
Siliconix / Vishay
Datasheet
1.SI4936ADY-T1-E3.pdf
(2 pages)
Specifications of SI4936ADY-T1-E3
Channel Type
N
Current, Drain
4.90 A
Gate Charge, Total
13 nC
Package Type
SO-8
Polarization
Dual N-Channel
Power Dissipation
1.1 W
Resistance, Drain To Source On
0.053 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
30 ns
Time, Turn-on Delay
6 ns
Transconductance, Forward
15 S
Voltage, Breakdown, Drain To Source
30 V
Voltage, Drain To Source
30 V
Voltage, Forward, Diode
0.8 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4936ADY-T1-E3
Manufacturer:
VISHAY
Quantity:
2 500
Part Number:
SI4936ADY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
30
30
(V)
J
Ordering Information: Si4936ADY-T1
ti
t A bi
G
G
S
S
1
1
2
2
J
J
a
a
0.053 @ V
0.036 @ V
= 150_C)
= 150_C)
t
a
a
Parameter
Parameter
1
2
3
4
r
DS(on)
Si4936ADY-T1—E3 (Lead (Pb)-Free)
Dual N-Channel 30-V (D-S) MOSFET
a
a
GS
GS
Top View
SO-8
(W)
= 4.5 V
= 10 V
a
8
7
6
5
D
D
D
D
A
1
1
2
2
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
I
= 25_C
= 70_C
= 25_C
= 70_C
D
5.9
4.9
(A)
Symbol
Symbol
T
R
R
R
G
V
J
V
I
P
P
DM
, T
I
I
I
thJA
thJF
1
DS
GS
D
D
S
D
D
FEATURES
D TrenchFETr Power MOSFET
D Lead (Pb)-Free Version is RoHS
stg
N-Channel MOSFET
Compliant
D
S
1
1
10 secs
Typical
5.9
4.7
1.7
2.0
1.3
50
90
32
G
−55 to 150
2
"20
"30
N-Channel MOSFET
30
Steady State
Maximum
Vishay Siliconix
D
S
2
62.5
2
110
4.4
3.6
0.9
1.1
0.7
40
Si4936ADY
Available
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1
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SI4936ADY-T1-E3 Summary of contents
Page 1
... Top View Ordering Information: Si4936ADY-T1 Si4936ADY-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation Maximum Power Dissipation ...
Page 2
... Si4936ADY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...