2ED020I12FA Infineon Technologies, 2ED020I12FA Datasheet - Page 23

• Manufacturer Part Number: 2ED020I12FA
• Description: MOSFET & Power Driver ICs Dual Channel IGBT Driver IC +/-1200V
• Manufacturer: Infineon Technologies

Specifications of 2ED020I12FA

• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2ED020I12FAXT

4.4.6
Parameter
Blanking Capacitor Charge Current
Blanking Capacitor Discharge Current
Desaturation Reference Level
Desaturation Filter Time
Desaturation Sense to OUT Low Delay
Desaturation Sense to FLT Low Delay
Desaturation Low Voltage
Leading edge blanking
4.4.7
Parameter
Active Shut Down Voltage
1) With reference to VEE2
Preliminary Datasheet
Desaturation protection
Active Shut Down
Symbol
I
I
V
T
T
T
V
T
Symbol
V
DESATC
DESATD
DESATleb
DESATOUT
DESATFLT
DESATleb
DESAT
DESATL
ACTSD
1)
Limit Values
min.
Limit Values
min.
450
8.3


0.4

10
-
-
23
typ.
typ.
500
250
350
400
0.6

13
9
max.
max.
2.25
0.95
550
410
9.5

4
-
-
Unit Test Conditions
Unit Test Conditions
mA V
uA V
ns
ns
us
ns
V
V
V
V
V
V
V
V
V
C
V
IN+=Low, IN-=Low,
OUT=Low
not subject of production
test
I
V
OUT
Version 1.2, 2010-09-20
LOAD
VCC2
DESAT
VCC2
DESAT
VCC2
VCC2
DESAT
OUT
FLT
CC2
Electrical Parameters
=-200mA,
EICEDRIVER®
=10%; I
open
=90%
= 1nF
=15V,V
=15V,V
=15V
=15V,V
=2V
=6V
=9V
2ED020I12FA
FLT
VEE2
VEE2
VEE2
=5mA
=-8V
=-8V
=-8V