Si8231-A-IS Silicon Laboratories Inc, Si8231-A-IS Datasheet - Page 8

• Manufacturer Part Number: Si8231-A-IS
• Description: MOSFET & Power Driver ICs 0.5A PWM Input
• Manufacturer: Silicon Laboratories Inc
• Type: High and Low Sider

Specifications of Si8231-A-IS

• Rise Time: 12 ns
• Fall Time: 12 ns
• Propagation Delay Time: 50 ns
• Supply Voltage (max): 24 V
• Supply Voltage (min): 10 V
• Supply Current: 11 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-16
• Bridge Type: Half Bridge
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Number Of Outputs: 2
• Output Current: 0.5 A
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Si823x
Table 1. Electrical Characteristics
4.5 V < VDDI < 5.5 V, VDDA = VDDB = 12 V or 15 V. TA = –40 to +125 °C. Typical specs at 25 °C
8
Parameter
Shutdown Time from
Disable True
Restart Time from
Disable False
Device Start-up Time
Common Mode
Transient Immunity
Notes:
1. VDDA = VDDB = 12 V for 5, 8, and 10 V UVLO devices; VDDA = VDDB = 15 V for 12.5 V UVLO devices.
2. TDD is the minimum overlap time without triggering overlap protection (Si8230/1/3/4 only).
3. The largest RDT resistor that can be used is 220 k.
t
Symbol
RESTART
t
CMTI
START
t
SD
1
(Continued)
VIA, VIB, PWM = VDDI or 0 V
Time from VDD_ = VDD_UV+
to VOA, VOB = VIA, VIB
Rev. 1.1
Test Conditions
Min
20
—
—
—
Typ
—
—
—
45
Max
60
60
40
—
Units
kV/µs
ns
ns
µs