BUK7Y35-55B NXP Semiconductors, BUK7Y35-55B Datasheet - Page 9
BUK7Y35-55B
Manufacturer Part Number
BUK7Y35-55B
Description
MOSFET, N CH, 55V, 28.4A, LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7Y35-55B115.pdf
(14 pages)
Specifications of BUK7Y35-55B
Transistor Polarity
N Channel
Continuous Drain Current Id
28.4A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
0.028ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
NXP Semiconductors
BUK7Y35-55B
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
V
(V)
GS
10
8
6
4
2
0
charge; typical values.
0
V
DS
= 14 V
4
8
V
DS
(A)
I
S
80
60
40
20
= 44 V
12
0
0.4
All information provided in this document is subject to legal disclaimers.
Q
003aac943
G
(nC)
T
0.6
j
16
=175 °C
Rev. 04 — 7 April 2010
0.8
Fig 15. Input, output and reverse transfer capacitances
T
1
j
= 25 °C
(pF)
C
10
10
10
3
2
10
as a function of drain-source voltage; typical
values.
1.2
-1
N-channel TrenchMOS standard level FET
003aac942
V
SD
(V)
1.4
1
BUK7Y35-55B
10
© NXP B.V. 2010. All rights reserved.
V
DS
C
C
C
003aac940
iss
oss
rss
(V)
10
2
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