BFY405 (P) Infineon Technologies, BFY405 (P) Datasheet - Page 3

• Manufacturer Part Number: BFY405 (P)
• Description: RF Bipolar Small Signal HiRel NPN Silicon RF Transistor
• Manufacturer: Infineon Technologies

Specifications of BFY405 (P)

• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 22000 MHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 12 mA
• Power Dissipation: 55 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: Micro-X
• Dc Collector/base Gain Hfe Min: 50 at 5 mA at 1 V
• Gain Bandwidth Product Ft: 22 GHz
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Package: Micro-X
• Comment: also available in (S) and (H) quality
• Vceo (max): 4.5 V
• Ic(max): 12.0 mA
• Ptot (max): 55.0 mW
• Lead Free Status / Rohs Status: No
• Other names: BFY405PNZ

Electrical Characteristics (continued)
Notes.:
1)
IFAG IMM RDP D HIR
Parameter
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
Collector-emitter capacitance
V
Emitter-base capacitance
V
Noise Figure
I
Z
Insertion power gain
I
Z
Power gain
I
Z
1dB Compression point
I
Z
C
C
C
C
C
S
S
S
S
CB
CE
EB
= 5 mA, V
= 5 mA, V
= 5 mA, V
= 10mA, V
= 2 mA, V
= Z
= Z
= Z
= Z
G
= 2 V, V
= 2 V, V
= 0.5V, V
ms
L
Sopt
Sopt
sopt
= 50 

, Z
, Z
S
S
12
21
CE
CE
CE
BE
BE
L
L
CE
CE
CB
= Z
= Z
= 2 V, f = 1.8 GHz
= 2 V, f = 1.8 GHz
= 2 V, f = 1.8 GHz
= vbe = 0, f = 1 MHz
= vbe = 0, f = 1 MHz
= 2 V, f = 1.8 GHz,
= 3 V, f = 2.0 GHz
= vcb = 0, f = 1 MHz
Lopt
Lopt
Symbol
f
C
C
C
F
|S
Gms
P
T
-1dB
CB
CE
EB
21e
3 of 4
|
2
1.)
min.
20
-
-
-
-
14
-
-
Values
typ.
22
0.05
0.32
0.36
1.15
18
23
5
max.
-
0.9
0.48
3.0
1.8
-
-
-
V2, February 2011
BFY405
Unit
GHz
pF
pF
pF
dB
dB
dB
dBm