BFY196 (P) Infineon Technologies, BFY196 (P) Datasheet
BFY196 (P)
Specifications of BFY196 (P)
Related parts for BFY196 (P)
BFY196 (P) Summary of contents
Page 1
HiRel NPN Silicon RF Transistor HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Hermetically sealed microwave package 6,5 GHz ...
Page 2
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, 105°C 2 Junction temperature Operating temperature range Storage temperature range Thermal Resistance 3.) Junction-soldering point Notes.: ...
Page 3
Electrical Characteristics (continued) Parameter DC Characteristics Base-Emitter forward voltage mA current gain mA Characteristics Transition frequency mA, V ...
Page 4
... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. ...