PTFB183404E V1 Infineon Technologies, PTFB183404E V1 Datasheet - Page 4

• Manufacturer Part Number: PTFB183404E V1
• Description: RF MOSFET Power RF LDMOS FETs 340W 1805-1880 MHz
• Manufacturer: Infineon Technologies

Specifications of PTFB183404E V1

• Lead Free Status / Rohs Status: No
• Other names: FB183404EV1NZ

Confidential, Limited Internal Distribution
Data Sheet
Typical Performance
60
50
40
30
20
10
19
18
17
16
15
14
1730
40
Efficiency
Efficiency
IMD3
1767.5
Gain
42
RL
V
Gain, Efficiency & Return Loss
DD
= 30 V, I
ƒ
44
1
Two-tone Broadband
Output Power, PEP (dBm)
= 1880 MHz, ƒ
1805
V
Two-tone Drive-up
DD
Frequency (MHz)
vs. Frequency
46
= 30 V, I
DQ
1842.5
= 2.6 A, P
48
(cont.)
DQ
2
50
Gain
1880
= 1879 MHz
= 2.6 A,
O UT
52
= 170 W
1917.5
54
1955
56
0
-10
-20
-30
-40
-50
50
40
30
20
10
0
4 of 18
-25
-30
-35
-40
-45
-50
-55
-60
-65
19
18
17
16
15
14
39
39
Gain
Efficiency
41
41
Two-tone Drive-up (over temp)
(P
ƒ
1
O UT
= 1842.5 MHz, ƒ
ƒ
43
1
43
Output Power, PEP (dBm)
-max 3rd order IMD @ -30dBc)
= 1880 MHz, ƒ
V
Output Power, PEP (dBm)
V
Efficiency
Two-tone Drive-up
DD
DD
45
IMD3
45
= 30 V, I
= 30 V, I
47
47
49
DQ
DQ
2
2
= 1841.5 MHz
49
= 2.6 A,
= 1879 MHz
= 2.6 A,
51
PTFB183404E
PTFB183404F
51
53
Rev. 04, 2010-11-17
+85°C
+25°C
-30°C
53
55
55
57
5
0
40
35
30
25
20
15
10
50
40
30
20
10
0