IS66WV51216DBLL-55TLI ISSI, Integrated Silicon Solution Inc, IS66WV51216DBLL-55TLI Datasheet - Page 8

• Manufacturer Part Number: IS66WV51216DBLL-55TLI
• Description: SRAM 8Mb, 512Kx16 70ns, 2.5-3.6V
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS66WV51216DBLL-55TLI

• Lead Free Status / Rohs Status: Supplier Unconfirmed

IS66WV51216DALL
IS66WV51216DBLL
READ CYCLE SWITCHING CHARACTERISTICS
Symbol
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4 to
2. Tested with the load in Figure 2. Transition is measured ±100 mV from steady-state voltage. Not 100% tested.
AC WAVEFORMS
READ CYCLE NO. 1
8
ADDRESS
t
t
t
t
t
t
t
t
t
t
t
t
V
rc
AA
oHA
AcS1/
doe
Hzoe
Lzoe
HzcS1/
LzcS1/
BA
HzB
LzB
dd
D
-0.2V/0.4V to V
Q0-D15
(2)
(2)
t
AcS2
t
t
LzcS2
HzcS2
(2)
(2)
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CS1/CS2 Access Time
OE Access Time
OE to High-Z Output
OE to Low-Z Output
CS1/CS2 to High-Z Output
CS1/CS2 to Low-Z Output
LB, UB Access Time
LB, UB to High-Z Output
LB, UB to Low-Z Output
dd
-0.3V and output loading specified in Figure 1.
PREVIOUS DATA VALID
(1,2)
(Address Controlled) (CS1 = OE = V
55 ns 70 ns
t
OHA
t
(1)
AA
Min.
55
10
10
—
—
—
—
—
5
0
0
0
t
(Over Operating Range)
RC
IL
Integrated Silicon Solution, Inc. — www.issi.com
, cS2 = WE = V
Max.
55
55
25
20
20
55
20
—
—
—
—
—
DATA VALID
IH
, UB or LB = V
Min.
70
10
10
—
—
—
—
—
5
0
0
0
t
OHA
Max.
70
70
35
25
25
70
25
—
—
—
—
—
IL
)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
02/22/2011
Rev. 00C