TLP251F Toshiba, TLP251F Datasheet
TLP251F
Specifications of TLP251F
Related parts for TLP251F
TLP251F Summary of contents
Page 1
... The TOSHIBA TLP251F consists of a GaAℓAs light emitting diode and an integrated photodetector. This unit is 8−lead DIP package. TLP251F is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP251 is capable of “direct” gate drive of lower power IGBTs. (~15A) • ...
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... Truth Table Tr1 On On Input LED Off Off Pin Configuration (top view (Note 0.1μF bypass capacitor must be connected between pin 8 and 5. Tr2 Off On Schematic 1: N.C. 2: Anode Cathode 4: N. GND (output N. TLP251F ( (Tr 2) GND 5 2007-10-01 ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 3 TLP251F 2007-10-01 ...