IPG20N06S2L-35 Infineon Technologies, IPG20N06S2L-35 Datasheet - Page 4

• Manufacturer Part Number: IPG20N06S2L-35
• Description: MOSFET Power Dual N-Ch 55V MOSFET
• Manufacturer: Infineon Technologies

Specifications of IPG20N06S2L-35

• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TDSON-8
• Lead Free Status / Rohs Status: Details
• Other names: IPG20N06S2L35XT

Rev. 1.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
= f(T
100
70
60
50
40
30
20
10
10
0
1
DS
0
1
); T
C
); V
C
p
=25°C; D =0; one channel active
GS
≥ 6 V; one channel active
50
T
V
C
DS
100
10
[°C]
[V]
100 µs
150
10 µs
1 ms
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
= f(T
25
20
15
10
10
10
= f(t
10
10
5
0
-1
-2
1
0
C
0
10
); V
p
-6
0.05
)
0.01
0.1
0.5
GS
single pulse
10
≥ 6 V; one channel active
p
/T
-5
50
10
-4
T
t
C
100
10
p
[°C]
[s]
-3
IPG20N06S2L-35
10
-2
150
10
2009-09-07
-1
200
10
0