BSO200P03S H Infineon Technologies, BSO200P03S H Datasheet - Page 7

• Manufacturer Part Number: BSO200P03S H
• Description: MOSFET Power P-KANAL
• Manufacturer: Infineon Technologies

Specifications of BSO200P03S H

• Package: SO-8
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 20.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / Rohs Status: Details
• Other names: BSO200P03SHXT

Rev. 1.3
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
10
36
34
32
30
28
26
24
22
20
AV
1
-60
=f(T
); R
1
j
GS
); I
j(start)
-20
=25 Ω
D
=-250 µA
10
20
t
T
AV
j
60
[°C]
[µs]
125 °C
100
100
100 °C
140
25 °C
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
10
V
9
8
7
6
5
4
3
2
1
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=-9.1 A pulsed
g s
10
-Q
Q
g
gate
Q
20
sw
[nC]
Q
-6 V
g d
BSO200P03S H
-15 V
30
-24 V
Q
g ate
2010-02-15
40