M29W640GT70NA6F NUMONYX, M29W640GT70NA6F Datasheet - Page 47

• Manufacturer Part Number: M29W640GT70NA6F
• Description: 64MB FLASH MEMORY
• Manufacturer: NUMONYX

M29W640GH, M29W640GL, M29W640GT, M29W640GB
Table 16.
1. Sampled only, not 100% tested.
Table 17.
1. The maximum input leakage current is
2. Sampled only, not 100% tested.
Symbol
V
I
I
I
I
V
LKO
V
V
LI
V
V
I
CC1
CC2
CC3
V
I
LO
PP
OH
OL
PP
Symbol
IH
ID
(1)
IL
C
(2)
C
OUT
IN
Input leakage current
Output leakage current
Supply current (read)
Supply current (standby)
Supply current
(program/erase)
Input low voltage
Input high voltage
Voltage for
program acceleration
Current for
program acceleration
Output low voltage
Output high voltage
Identification voltage
Program/erase lockout
supply voltage
Device capacitance
DC characteristics
Parameter
Input capacitance
Output capacitance
V
V
PP
PP
/WP
/WP
Parameter
±
controller active
Program/erase
5 µA on the V
V
V
0 V ≤ V
RP = V
E = V
CC
CC
0 V ≤ V
E = V
Test condition
I
OH
I
OL
Test condition
f = 6 MHz
= 2.7 V ± 10%
= 2.7 V ± 10%
V
= –100
IL
= 1.8 mA
V
CC
OUT
PP
OUT
CC
, G = V
IN
IN
/WP pin.
±0.2 V,
= 0 V
V
≤ V
±0.2 V
= 0 V
≤ V
PP
V
V
µ
CC
PP
A
/WP = V
IL
IH
CC
,
/WP =
or V
IH
PP
Min
V
0.7V
CC
DC and AC parameters
–0.5
11.5
11.5
Min
1.8
–0.4
CC
Max
12
V
6
CC
Max
12.5
0.45
12.5
100
0.8
2.3
±1
±1
10
20
20
15
+ 0.3
Unit
pF
pF
Unit
47/91
mA
mA
mA
mA
µ
µ
µA
V
V
V
V
V
V
V
A
A