SI1315DL-T1-GE3 Vishay, SI1315DL-T1-GE3 Datasheet

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SI1315DL-T1-GE3

Manufacturer Part Number
SI1315DL-T1-GE3
Description
MOSFET P-CH 8V 900MA SC70-3
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI1315DL-T1-GE3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
336 mOhm @ 800mA, 4.5V
Drain To Source Voltage (vdss)
8V
Current - Continuous Drain (id) @ 25° C
900mA
Vgs(th) (max) @ Id
800mV @ 250µA
Gate Charge (qg) @ Vgs
3.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
112pF @ 4V
Power - Max
400mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Based on T
Document Number: 67193
S10-2765-Rev. A, 29-Nov-10
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
PRODUCT SUMMARY
Ordering Information: Si1315DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
V
DS
- 8
(V)
C
= 25 °C.
0.336 at V
0.450 at V
0.650 at V
G
S
R
DS(on)
1
2
SC-70 (3-LEADS)
* Marking Code
Si1315DL (LJ)*
GS
GS
GS
SOT-323
Top View
J
= - 4.5 V
= - 2.5 V
= - 1.8 V
()
= 150 °C)
P-Channel 8 V (D-S) MOSFET
3
I
D
- 0.9
- 0.7
- 0.5
D
(A)
c
A
Q
= 25 °C, unless otherwise noted)
g
1 nC
(Typ.)
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Load Switch for Portable Devices
• DC/DC Converters
Definition
Symbol
T
J
V
V
I
P
, T
DM
I
I
GS
DS
D
S
D
g
stg
Tested
®
Power MOSFET
G
P-Channel MOSFET
- 50 to 150
- 0.8
- 0.7
0.3
0.2
- 0.25
Limit
- 0.9
- 0.7
- 0.3
260
± 8
0.4
0.2
- 8
- 3
S
D
a, b
a, b
a, b
a, b
Vishay Siliconix
Si1315DL
www.vishay.com
Unit
°C
W
V
A
1

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SI1315DL-T1-GE3 Summary of contents

Page 1

... GS SOT-323 SC-70 (3-LEADS Top View Si1315DL (LJ)* * Marking Code Ordering Information: Si1315DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si1315DL Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 430 °C/W. SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient ...

Page 3

... 0.0 1.5 2.0 0.0 200 150 100 2.4 3.0 0 1.5 1 0.9 0.7 1.2 1.5 1 Si1315DL Vishay Siliconix ° 125 ° °C C 0.3 0.6 0.9 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance I = 0.8 A ...

Page 4

... Si1315DL Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted 150 ° 0.1 0 0.35 0. Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.85 0.75 0. 250 μA D 0.55 0.45 0. Temperature (°C) J Threshold Voltage 0.01 www.vishay.com 4 0.8 0 °C J 0.4 0.2 0 1.05 1. 100 125 150 0.001 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 0.35 0.28 0.21 0.14 0.07 0.00 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si1315DL Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si1315DL Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... 0. Document Number: 71153 06-Jul-01 Package Information Vishay Siliconix Dim Min Nom Max A 0.90 – 1.10 A – – 0. 0.80 – 1. 0.25 – 0.40 c 0.10 – 0.25 D 1.80 2.00 2.20 E 1.80 2.10 2. 1.15 1.25 1. 0.65BSC e 1.20 1.30 1. 0.10 0.20 0.30 7_Nom ECN: S-03946—Rev. C, 09-Jul-01 ...

Page 8

... This technical note discusses pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for single-channel LITTLE FOOT power MOSFETs in the SC-70 package. These new Vishay Siliconix devices are intended for small-signal applications where a miniaturized package is needed and low levels of current (around 350 mA) need to be switched, either directly or by using a level shift configuration ...

Page 9

... AN813 Vishay Siliconix THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the 3-pin SC-70 measured as junction-to-foot thermal resistance is 285_C/W typical, 340_C/W maximum. Junction-to-foot thermal resistance for the 6-pin SC70-6 is 105_C/W typical, 130_C/W maximum — a nearly two-thirds reduction compared with the 3-pin device. ...

Page 10

... RECOMMENDED MINIMUM PADS FOR SC-70: 3-Lead Return to Index Return to Index Document Number: 72601 Revision: 21-Jan-08 Application Note 826 0.025 0.022 (0.622) (0.559) 0.027 (0.686) 0.071 (1.803) Recommended Minimum Pads Dimensions in Inches/(mm) Vishay Siliconix www.vishay.com 17 ...

Page 11

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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