RRR040P03TL Rohm Semiconductor, RRR040P03TL Datasheet
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Manufacturer Part Number
RRR040P03TL
Description
MOSFET P-CH 30V 4A TSMT3
Manufacturer
Rohm Semiconductor
Specifications of RRR040P03TL
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
10.5nC @ 5V
Input Capacitance (ciss) @ Vds
1000pF @ 10V
Power - Max
1W
Mounting Type
*
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
*Mounted on a ceramic board.
Silicon P-channel MOSFET
1) Low On-resistance.
2) Space saving small surface mount package (TSMT3).
3) 4V drive.
Switching
RRR040P03
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
Channel to Ambient
4V Drive Pch MOSFET
Structure
Features
Application
Packaging specifications
Absolute maximum ratings (Ta = 25C)
Thermal resistance
RRR040P03
Type
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Rth (ch-a)
Symbol
Symbol
Taping
3000
V
V
Tstg
Tch
TL
I
I
P
DSS
GSS
I
I
DP
SP
D
S
D
*1
*1
*2
*
55 to +150
Limits
Limits
0.8
20
16
30
16
150
125
1.0
4
1/5
C / W
Unit
Unit
C
C
W
V
V
A
A
A
A
Dimensions (Unit : mm)
Inner circuit
TSMT3
(1) Gate
(2) Source
(3) Drain
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1)
(3)
Abbreviated symbol : UG
(2)
∗1
(3)
(2)
2010.04 - Rev.A
∗2
Related parts for RRR040P03TL
RRR040P03TL Summary of contents
Drive Pch MOSFET RRR040P03 Structure Silicon P-channel MOSFET Features 1) Low On-resistance. 2) Space saving small surface mount package (TSMT3 drive. Application Switching Packaging specifications Package Type Code Basic ordering unit (pieces) RRR040P03 ...
RRR040P03 Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage Drain-source breakdown voltage V Zero gate voltage drain current Gate threshold voltage V Static drain-source on-state R resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on ...
RRR040P03 Electrical characteristics curves 4 Ta=25° -10V GS Pulsed V = -4. -4. -2. -2. 0.2 0.4 0.6 0.8 DRAIN-SOURCE VOLTAGE : ...
RRR040P03 150 Ta=25°C Pulsed I = -2.0A D 100 I = -4. GATE-SOURCE VOLTAGE : -V GS Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 10000 Ta=25°C Ciss f=1MHz V =0V GS 1000 ...
RRR040P03 Measurement circuits D.U. Fig.1-1 Switching time measurement circuit D.U.T. I G(Const Fig.2-1 Gate charge measurement circuit www.rohm.com ...
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...
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